2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery di/dt Max. Power Dissipation ID(puls] VGS IAR Operating and Storage Temperature range Tch Tstg Ratings 600 600 ±42 ±2.7 ±168 ±30 42 Unit V V A A A V A Remarks VGS=-30V Ta=25°C Equivalent circuit schematic Drain(D) Tch < = 25°C <150°C Tch = IAR 21 A EAS 828 mJ Note *2 kV/µs kV/µs A/µs W VDS< =600V Note *3 Note *4 Tc=25°C Ta=25°C Gate(G) dVDS/dt dV/dt -di/dt PD 20 5 100 600 2.50 +150 -55 to +150 Source(S) Note *2:StartingTch=25°C,L= 861µH,VCC=60V See to the ‘Avalanche Energy’ graph < < Note *3:IF < = -ID, -di/dt = 100A/µs,VCC= BVDSS,Tch= 150°C < < -I D , -dV/dt = 5kV/ µ s,V CC BV DSS ,Tch Note *4:IF < = =150°C = °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS Q GD IAV VSD trr Q rr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=21A VGS=10V Typ. 600 3.0 Tch=25°C Tch=125°C ID=21A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=21A VGS=10V RGS=10 Ω VCC=300V ID=42A VGS=10V L=861µH Tch=25°C 20 Max. 5.0 25 2.0 100 0.17 10 1.0 10 0.14 40 5100 7650 700 1050 48 72 60 90 90 135 180 270 30 45 105 160 44 65 30 45 42 IF=42A VGS=0V Tch=25°C IF=42A VGS=0V -di/dt=100A/µs Tch=25°C 1.10 160 1.00 1.70 250 2.5 Units V V µA mA nA Ω S pF ns nC A V ns µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.208 50.0 Units °C/W °C/W 1 2SK3697-01 FUJI POWER MOSFET Characteristics 800 Allowable Power Dissipation PD=f(Tc) 120 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 110 700 100 20V 10V 90 600 8V 80 7.0V ID [A] PD [W] 500 400 70 60 50 300 6.5V 40 30 200 20 100 VGS=6.0V 10 0 0 0 25 50 75 100 125 0 150 4 8 12 100 16 20 24 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 100 10 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] 0.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS=6V 100 ID [A] 0.5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=21A,VGS=10V 6.5V 0.4 RDS(on) [ Ω ] RDS(on) [ Ω ] 0.3 7.0V 8V 10V 20V 0.2 0.3 max. 0.2 typ. 0.1 0.1 0.0 0.0 0 20 40 60 ID [A] 80 100 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3697-01 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=42A,Tch=25°C 6.5 6.0 12 Vcc= 120V 5.5 max. 300V 10 4.5 480V 4.0 8 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 Tch [°C] 10 5 100 120 140 160 180 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µ s pulse test,Tch=25°C 100 10 4 Ciss 10 3 10 2 IF [A] C [pF] 10 Coss 1 Crss 10 1 0 1 10 2 10 10 0.1 0.00 3 10 0.25 0.50 0.75 VDS [V] 10 3 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=42A 2500 IAS=17A 2000 td(off) 1500 EAV [mJ] 10 2 t [ns] td(on) 1000 IAS=42A tf tr 10 IAS=26A 1 500 0 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3697-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=60V 60 50 IAV [A] 40 Non-Repetitive (Single Pulse) 30 20 Repetitive 10 0 0 25 50 75 100 125 150 175 200 starting Tch [°C] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=60V 2 10 Avalanche Current I AV [A] Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 10 -7 10 -6 -5 10 10 -4 -3 10 -1 10 10 -2 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 -1 10 -2 10 -3 10 10 -6 -5 10 10 -4 10 -3 t [sec] -2 10 10 0 http://www.fujielectric.co.jp/fdt/scd/ 4