6MBI50VA-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Maximum junction temperature Temperature under switching conditions Storage temperature Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc Tjmax Tjop Tstg Continuous 1ms 1ms 1 device Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - Tc=80°C Tc=80°C Maximum ratings 1200 ±20 50 100 50 100 280 175 150 -40~+125 V V A W °C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 6MBI50VA-120-50 IGBT Modules Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, I C = 50mA VCE (sat) (terminal) VGE = 15V I C = 50A Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Cies ton tr tr (i) toff tf Turn-on time Turn-off time VF (terminal) Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 50A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V I C = 50A VGE = +15 / -15V RG = 15Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C I F = 50A Forward on voltage VF (chip) I F = 50A trr Resistance R B value B I F = ±20 T = 25°C T = 100°C T = 25 / 50°C Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Thermistor Reverse recovery time Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.15 2.60 2.50 2.55 1.85 2.30 2.20 2.25 4.2 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.00 2.45 2.15 2.10 1.70 2.15 1.85 1.80 0.1 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Characteristics min. typ. max. 0.54 0.73 0.05 - Inverter IGBT Inverter FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] 15,16 25,26 1 2 3 4 U 23,24 5 6 V 21,22 7 8 9 10 W 19,20 11 12 27,28 13,14 2 17 18 Units °C/W 6MBI50VA-120-50 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 50 VGE=20V 15V VGE=20V 12V 40 Collector current: IC [A] Collector current: IC [A] 50 Tj= 150oC / chip 30 10V 20 10 15V 12V 40 30 10V 20 10 8V 8V 0 0 0 2 1 3 4 0 5 Collector-Emitter voltage: VCE[V] 125°C 4 5 8 150°C 40 30 20 10 0 6 4 Ic=50A Ic=25A Ic= 13A 2 0 0 1 2 3 5 4 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies 1.0 Cres 0.1 Coes 0.0 10 20 30 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=600V， Ic=50A，Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 0 15 Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 3 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip Collector - Emitter voltage: VCE [V] Collector current: IC [A] Tj=25°C 2 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 50 1 40 VGE VCE 0 Collector - Emitter voltage: VCE [V] 50 100 150 200 Gate charge: Qg [nC] 3 250 300 6MBI50VA-120-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=15Ω，Tj= 150°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=15Ω，Tj= 125°C toff ton tr 100 tf 10 0 10 20 30 40 50 10000 1000 ton tr 100 tf 10 60 0 Collector current: IC [A] 10000 toff ton tr 100 tf 10 10 20 30 40 Collector current: IC [A] 100 6 50 60 Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) 5 4 3 Err(150°C) Err(125°C) 2 1 0 0 25 50 75 Collector current: IC [A] Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V，Ic=50A，VGE=±15V [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 15Ω ,Tj <= 125°C 5 75 Eoff(150°C) Eoff(125°C) 4 3 Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] 10 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=15Ω Switching loss : Eon, Eoff, Err [mJ/pulse] Switching time : ton, tr, toff, tf [ nsec] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V，Ic=50A，VGE=±15V，Tj= 125°C 1000 toff Eon(150°C) Eon(125°C) 2 Err(150°C) Err(125°C) 1 50 RBSOA (Repetitive pulse) 25 0 0 10 100 0 1000 400 800 1200 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [Ω] 4 1600 6MBI50VA-120-50 [ Inverter ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] [ Inverter ] Forward current vs. forward on voltage (typ.) chip 50 Forward current : IF [A] IGBT Modules Tj=25°C 40 Tj=150°C 30 Tj=125°C 20 10 0 0 2 1 3 4 1000 Reverse recovery characteristics (typ.) Vcc=600V，VGE=±15V，Rg=38Ω trr(150°C) trr(125°C) 100 Irr(150°C) Irr(125°C) 10 5 0 25 10.00 Transient thermal resistance (max.) 100 FWD[Inverter] 1.00 IGBT[Inverter] 0.10 0.01 0.001 0.010 0.100 50 75 Forward current : I F [A] Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] Forward on voltage : VF [V] 10 1 0.1 1.000 [ Thermistor ] Temperature characteristic (typ.) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Pulse width : Pw [sec] Outline Drawings, mm 5 6MBI50VA-120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6