2MBI225VN-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 225A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Symbols VCES VGES Ic Ic pulse Collector current -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) Conditions Inverter Items Collector-Emitter voltage Gate-Emitter voltage Continuous 1ms Tc=80°C Tc=80°C 1ms 1 device AC : 1min. Maximum ratings 1200 ±20 225 450 225 450 1070 175 150 125 -40 to +125 Units V V 2500 VAC 3.5 4.5 Nm A W °C Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, I C = 225mA VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) VGE = 15V I C = 225A VCE = 10V, VGE = 0V, f = 1MHz Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VCC = 600V I C = 225A VGE = ±15V RG = 1.6Ω VGE = 0V I F = 225A Reverse recovery time trr Resistance R B value B I F = 225A T=25°C T=100°C T=25/50°C Symbols Conditions Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.20 2.65 2.55 2.60 1.85 2.30 2.20 2.25 18 550 1200 180 600 120 1050 2000 110 350 2.05 2.50 2.20 2.15 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Units mA nA V V nF nsec V nsec Ω K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*5) Rth(c-f) Inverter IGBT Inverter FWD with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.14 0.19 0.0167 - Units °C/W 2MBI225VN-120-50 IGBT Modules Characteristics (Representative) [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 500 500 Vge=20V 15V Collector current: Ic [A] Collector current: Ic [A] 300 10V 200 15V Vge= 20V 12V 400 100 400 12V 300 10V 200 100 8V 8V 0 0 0 1 2 4 0 5 2 3 4 5 Collector-Emitter voltage: Vce [V] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 Collector-Emitter Voltage: Vce [V] Tj=25°C 125°C 400 150°C 300 200 100 0 8 6 4 Ic=450A Ic=225A Ic=112A 2 0 0 1 2 3 4 5 5 20 [INVERTER] [INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=225A, Tj= 25°C Collector-Emitter voltage: Vce [200V/div] Gate-Emitter voltage: Vge [5V/div] Cies 10 Coes Cres 0.1 0 15 Gate-Emitter Voltage: Vge [V] 100 1 10 Collector-Emitter Voltage: Vce [V] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, ƒ= 1MHz, Tj= 25°C Gate Capacitance: Cies, Coes, Cres [nF] 1 Collector-Emitter voltage: Vce [V] 500 Collector Current: Ic [A] 3 5 10 15 20 25 Vge Vce 0 30 500 1000 1500 Gate charge: Qg [nC] Collector-Emitter voltage: Vce [V] 2 25 2000 2MBI225VN-120-50 IGBT Modules [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff 1000 ton tr tf 100 10 0 100 200 300 400 ton tr tf 100 10 0 100 200 300 400 500 Collector current: Ic [A] Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C [INVERTER] Switching loss vs. Collector current (typ.) Vcc=600, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] Tj=125oC Tj=150oC toff 1000 ton tr tf 100 10 0.1 1 10 80 Tj=125oC Tj=150oC Eoff 60 40 Err 20 Eon 0 100 0 100 200 300 400 500 Gate resistance: Rg [Ω] Collector current: Ic [A] [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C [INVERTER] Reverse bias safe operating area (max.) +Vge=15V, -Vge=15V, Rg=1.6Ω, Tj=150°C 150 600 Tj=125oC Tj=150oC Eon 500 Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] toff 1000 500 10000 Switching loss: Eon, Eoff, Err [mJ/pulse] Tj=125oC Tj=150oC 100 50 Eoff 400 300 200 100 Err 0 0 0.1 1.0 10.0 100.0 0 Gate resistance: Rg [Ω] 500 1000 Collector-Emitter voltage: Vce [V] 3 1500 2MBI225VN-120-50 IGBT Modules [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C [INVERTER] Forward Current vs. Forward Voltage (typ.) chip 10000 400 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Forward current: If [A] 500 Tj=25°C 300 200 125°C 100 150°C 0 1 2 trr 100 3 0 100 200 300 400 500 Forward on voltage: Vf [V] Forward current: If [A] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C Transient Thermal Resistance (max.) 10000 1 Tj=125oC Tj=150oC 1000 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Irr 10 0 Irr trr 100 10 0 100 200 300 400 Temperature characteristic (typ.) 100 10 1 0.1 0 20 40 60 0.1 IGBT 0.01 0.01 0.1 Pulse Width : Pw [sec] [THERMISTOR] -60 -40 -20 FWD 0.001 0.001 500 Forward current: If [A] Resistance : R [kΩ] 1000 80 100 120 140 160 Temperature [°C] 4 1 2MBI225VN-120-50 IGBT Modules N OUT P Outline Drawings, mm Equivalent Circuit Schematic [ Thermistor ] [ Inverter ] C P T1 T2 G1 E1 OUT G2 E2 N 5 2MBI225VN-120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6