HMC499LC4 v03.1208 LINEAR & POWER AMPLIFIERS - SMT 11 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Typical Applications Features The HMC499LC4 is ideal for: Output IP3: +34 dBm • Point-to-Point Radios Saturated Power: +24 dBm @ 16% PAE • Point-to-Multi-Point Radios & VSAT Gain: 17 dB • Test Equipment & Sensors Supply: +5V @ 200mA • Military End-Use 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm SMT Package General Description Functional Diagram The HMC499LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” RoHS Compliant SMT package. Operating from 21 to 32 GHz, the amplifier provides 16 dB of gain, +24 dBm of saturated power and 16% PAE from a +5V supply voltage. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC499LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 200 mA* Parameter Min. Frequency Range Gain 14 Gain Variation Over Temperature Min. 13 0.03 23 Max. Min. 9 0.03 20 dB 0.03 dB/ °C dB 8 dB 23 dBm 23.5 23.5 24 dBm Output Third Order Intercept (IP3) 31 34 33.5 dBm Noise Figure 6 5 5 dB 200 200 200 mA Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V Typ.) * Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. 11 - 288 Units GHz 8 12 23 Max. 13 0.02 8 20 Typ. 28 - 32 16 0.02 11 20 Typ. 24 - 28 10 Output Return Loss Saturated Output Power (Psat) Max. 17 0.02 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 21 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Broadband Gain & Return Loss Gain vs. Temperature 22 20 20 15 18 16 5 S21 0 S11 S22 GAIN (dB) -5 14 12 10 +25 C +85 C -40 C 6 -10 4 -15 2 -20 0 18 20 22 24 26 28 30 32 34 20 36 21 22 23 FREQUENCY (GHz) 27 28 29 30 31 32 33 Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C -3 RETURN LOSS (dB) -4 RETURN LOSS (dB) 24 25 26 FREQUENCY (GHz) Input Return Loss vs. Temperature -8 -12 -16 +25 C +85 C -40 C -6 -9 -12 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 33 20 21 22 23 FREQUENCY (GHz) 24 25 26 27 28 29 30 31 32 33 31 32 33 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 26 26 Psat (dBm) P1dB (dBm) 11 8 22 +25 C +85 C -40 C 18 14 LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 10 22 +25 C +85 C -40 C 18 14 10 10 20 21 22 23 24 25 26 27 28 29 30 FREQUENCY (GHz) 31 32 33 20 21 22 23 24 25 26 27 28 29 30 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 289 HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature 40 12 10 NOISE FIGURE (dB) 32 +25 C +85 C -40 C 28 24 6 4 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 20 21 22 23 24 25 26 FREQUENCY (GHz) 28 29 30 31 32 33 Reverse Isolation vs. Temperature 0 32 30 -10 28 26 ISOLATION (dB) Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 27 FREQUENCY (GHz) Gain, Power & Output IP3 vs. Supply Voltage @ 22 GHz 24 22 20 18 -20 +25 C +85 C -40 C -30 -40 -50 16 Gain P1dB Psat IP3 14 12 -60 -70 10 4.5 5 20 5.5 21 22 23 24 25 26 27 28 29 30 31 32 33 12 16 FREQUENCY (GHz) Vdd Supply Voltage (Vdc) Power Compression @ 22 GHz Power Compression @ 30 GHz 28 24 Pout (dBm), GAIN (dB), PAE (%) 28 Pout Gain PAE 20 16 12 8 4 0 -12 -8 -4 0 4 INPUT POWER (dBm) 11 - 290 +25 C +85 C -40 C 8 2 20 Pout (dBm), GAIN (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT 11 IP3 (dBm) 36 8 12 24 Pout Gain PAE 20 16 12 8 4 0 -12 -8 -4 0 4 8 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC499LC4 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Gate Bias Voltage (Vgg) -4 to 0 Vdc RF Input Power (RFIN)(Vdd = +5 Vdc) +20 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 25 mW/°C above 85 °C) 2.25 W Thermal Resistance (channel to ground paddle) 40 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) +4.5 193 +5.0 200 +5.5 207 Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 200 mA at +5V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 11 LINEAR & POWER AMPLIFIERS - SMT v03.1208 NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 291 HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Pin Descriptions Function Description 1, 5 - 8, 10 - 14, 18, 20, 22, 24 Pin Number N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2, 4, 15, 17 GND Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 9 Vgg Gate control for amplifier. Adjust to achieve Id of 200 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 16 RFOUT This pad is AC coupled and matched to 50 Ohms. 23, 21, 19 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 292 Interface Schematic Application Circuit Component Value C1 100 pF C2 1,000 pF C3 2.2 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Evaluation PCB List of Material for Evaluation PCB 108537 [1] Item J1, J2 Description 2.92 mm PC mount K-connector J3 - J8 DC Pin C1 - C4 100 pF capacitor, 0402 pkg. C5 - C8 1,000 pF Capacitor, 0603 pkg. C9 - C12 2.2μF Capacitor, Tantalum U1 HMC498LC4 Amplifier PCB [2] 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 293