HMC442LC3B v02.1208 11 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Typical Applications Features The HMC442LC3B is an ideal gain block or driver amplifier for: Gain: 13 dB • Point-to-Point Radios Supply Voltage: +5V • Point-to-Multi-Point Radios 50 Ohm Matched Input/Output • LO Driver for HMC Mixers RoHS Compliant 3 x 3 mm SMT package Saturated Power: +23 dBm @ 26% PAE • Military EW & ECM Functional Diagram General Description The HMC442LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” RoHS compliant SMT package. Operating between 17.5 and 25.5 GHz, the amplifier provides 13 dB of gain, +23 dBm of saturated power and 26% PAE from a +5V supply voltage. This 50 Ohm matched amplifier does not require any external components, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC442LC3B allows the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd = +5V, Idd = 84 mA* Parameter Min. Frequency Range Gain 10 Gain Variation Over Temperature Max. Min. 10 0.03 21 Min. 8 0.03 22 Max. dB 0.03 5 19 dB/ °C dB 12 dB 22 dBm Saturated Output Power (Psat) 23 23.5 23 dBm Output Third Order Intercept (IP3) 27 26 26 dBm Noise Figure 8 8 9 dB Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 84 84 84 mA *Adjust Vgg between -1.5 to -0.5V to achieve Idd = 84 mA typical. 11 - 104 Units GHz 11 0.02 9 19 Typ. 24.0 - 25.5 10 9 18 Max. 13 0.02 10 Output Return Loss Typ. 21.0 - 24.0 13 0.02 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 17.5 - 21.0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Broadband Gain & Return Loss Gain vs. Temperature 15 20 10 GAIN (dB) RESPONSE (dB) 16 S21 S11 S22 5 0 -5 12 8 11 +25C +85C -40C -10 4 0 -20 14 17 20 23 26 29 16 17 18 19 Input Return Loss vs. Temperature 22 23 24 25 26 27 0 +25C +85C -40C -4 RETURN LOSS (dB) -4 RETURN LOSS (dB) 21 Output Return Loss vs. Temperature 0 -8 -12 -16 -8 -12 +25C +85C -40C -16 -20 -20 16 17 18 19 20 21 22 23 24 25 26 27 16 17 18 19 FREQUENCY (GHz) 20 21 22 23 24 25 26 27 24 25 26 27 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 26 26 Psat (dBm) P1dB (dBm) 20 FREQUENCY (GHz) FREQUENCY (GHz) 22 18 +25C +85C -40C 14 LINEAR & POWER AMPLIFIERS - SMT -15 22 +25C +85C -40C 18 14 10 10 16 17 18 19 20 21 22 23 FREQUENCY (GHz) 24 25 26 27 16 17 18 19 20 21 22 23 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 105 HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Power Compression @ 18 GHz Power Compression @ 23 GHz 28 24 Pout (dBm), GAIN (dB), PAE (%) 11 Pout (dBm), GAIN (dB), PAE (%) 28 Pout Gain PAE 20 16 12 8 4 0 -10 -6 -2 2 6 10 24 Pout Gain PAE 20 16 12 8 4 0 -10 14 -6 -2 INPUT POWER (dBm) 34 14 10 NOISE FIGURE (dB) Psat (dBm) 10 12 30 26 22 +25C +85C -40C 18 8 6 4 +25C +85C -40C 2 14 0 16 17 18 19 20 21 22 23 24 25 26 27 16 17 18 19 FREQUENCY (GHz) 21 22 23 24 25 26 27 26 27 Reverse Isolation vs. Temperature 30 0 25 -10 ISOLATION (dB) 20 15 10 GAIN P1dB Psat IP3 5 0 4.5 20 FREQUENCY (GHz) Gain, Power and Output IP3 vs. Supply Voltage @ 23 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 6 Noise Figure vs. Temperature Output IP3 vs. Temperature 5 Vdd Supply Voltage (Vdc) 11 - 106 2 INPUT POWER (dBm) -20 +25C +85C -40C -30 -40 -50 5.5 -60 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442LC3B v02.1208 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +5.5 Vdc Gate Bias Voltage (Vgg) -8.0 to 0 Vdc RF Input Power (RFIN)(Vdd = +5Vdc, Idd = 85 mA) +16 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 5.46 mW/°C above 85 °C) 0.491 W Thermal Resistance (channel to ground paddle) 183 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +4.5 82 +5.0 84 +5.5 86 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing LINEAR & POWER AMPLIFIERS - SMT 11 NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30 - 80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 107 HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Pin Descriptions 11 Pin Number Function Description 1, 3, 7, 9 GND Package bottom must also be connected to RF/DC ground 2 RFIN This pin is AC coupled and matched to 50 Ohms. 4, 6, 10, 12 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 5 Vgg Gate control for amplifier. Adjust to achieve Id of 84 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. 8 RFOUT This pin is AC coupled and matched to 50 Ohms. 11 Vdd Power Supply Voltage for the amplifier. External bypass capacitors are required. Interface Schematic Application Circuit 11 - 108 Component Value C1, C2 100 pF C3, C4 1,000 pF C5, C6 2.2 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Evaluation PCB List of Materials for Evaluation PCB 109712 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J6 DC Pin C1 - C2 100 pF Capacitor, 0402 Pkg. C3 - C4 1000 pF Capacitor, 0603 Pkg. C5 - C6 2.2 μF Capacitor, Tantalum U1 HMC442LC3B Amplifier PCB [2] 109710 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 109