HITTITE HMC714LP5

HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Features
• Crest Factor (Peak-to-Average Power Ratio)
Measurement
• Envelope-to-Average Power Ratio Measurement
• Dual channel and channel difference
output ports
• Excellent Channel Matching and Channel
Isolation
12
• RF Signal Wave Shape & Crest Factor
Independent
• Supports Controller Mode[1]
• ± 1 dB Detection Accuracy to 3.9 GHz
• Input Dynamic Range -55 dBm to +15 dBm
• +5V Operation from -40° C to +85° C
• Excellent Temperature Stability
• Integrated Temperature Sensor
• Power-Down Mode
• 32 Lead 5x5mm SMT Package: 25mm2
POWER DETECTORS - SMT
Typical Applications
• Log -> Root - Mean - Square (RMS)
Conversion
• Received Signal Strength Indication (RSSI)
• Transmitter Power Control
• Dual Channel wireless infrastructure radio
• Transmitter Signal Strength Indication (TSSI)
• Receiver Automatic Gain Control
• Antenna VSWR Monitor
Functional Diagram
[1] For more information regarding controller mode operation, please contact your Hittite sales representative or
email [email protected]
12 - 114
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
General Description
The HMC714LP5E is a dual-channel RMS power detector designed for high accuracy RF power signal measurement
and control applications over the 0.1 to 3.9 GHz frequency range. The device can be used with input signals having
RMS values from -55 dBm to +15 dBm referenced to 50 Ω and large crest factors with no accuracy degradation.
The HMC714LP5E also provides “channel difference” output ports via pins OUTP and OUTN, permitting measurements of the input signal power ratio between the two power detection channels. These outputs may be used in
single-ended or differential configurations. An input voltage applied to the VLVL input pin is used to set the common
mode voltage reference level for OUTP and OUTN. On the Hittite evaluation board, the VLVL pin is shorted to VREF2
output to provide a nominal bias voltage of 2.5V; but any external bias voltage may be used to set VLVL.
The HMC714LP5E also features INSA and INSB pins which provide a measurement of instantaneous signal power
normalized to average power level in each channel. Reading both the INSA/INSB and RMSA/RMSB output voltage
signals provides a very informative picture of the RF input signal; providing peak power, average power, peak-toaverage power, and RF wave shape.
The device also includes a buffered PTAT temperature sensor output with a temperature scaling factor of 2.2 mV/°C
yielding a typical output voltage of 600 mV at 0°C.
The HMC714LP5E operates over the -40 to +85C temperature range, and is available in a compact, 32-lead 4x4 mm
leadless QFN package
Electrical Specifi cations I, TA = +25°C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 μF
Parameter
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Units
Input Signal Frequency
100
500
900
1900
2200
3000
3500
3900
MHz
Differential Input Configuration, Channel A
68
68
69
72
71
66
47
42
dB
Differential Input Configuration, Channel B
68
69
69
71
71
64
45
41
Input Signal Frequency
100
900
1800 ± 300
2200 ± 300
3600 ± 300
MHz
Single-Ended Input Configuration, Channel A
70
62
71
69
61
dB
Single-Ended Input Configuration, Channel B
70
62
71
69
61
dB
Input Signal Frequency
100
500
900
1900
2200
3000
3500
3900
MHz
Input A to Input B Isolation
(Baluns Macom ETC1-1-13 at both channels)
72
70
69
53
51
56
48
47
dB
Input A to RMS B Isolation
(PIN B = -45 dBm, RMS B = RMSBINB ±1 dB)
60+
56
46
44
47
dB
Input B to RMSA Isolation
(PINA = -45 dBm, RMSA = RMSAINA ±1 dB)
60+
58
46
44
48
dB
Dynamic Range (± 1 dB measurement error)
dB
12
POWER DETECTORS - SMT
Each RMS detection channel is fully specified for operation up to 3.9 GHz, over a wide dynamic range of 70 dB. The
HMC714LP5E operates from a single +5V supply and provides two linear-in-dB detection outputs at the RMSA and
RMSB pins with scaled slopes of 37 mV/dB. The RMSA and RMSB channel outputs provide RMS detection performance in terms of dynamic range, logarithmic linearity and temperature stability similar to Hittite’s HMC614LPE RMS
Detector. The RMSA and RMSB outputs provide a read of average input signal power, or true-RMS power. Frequency
detection up to 5.8 GHz is possible, with excellent channel matching of less than 0.5 dB (for the single-ended configuration), over a wide range of input frequencies and with low temperature drift.
Channel Isolations
Input A to RMS B Isolation
(PIN B = -40 dBm, RMS B = RMSBINB ±1 dB)
47
39
dB
Input B to RMSA Isolation
(PINA=-40 dBm, RMSA=RMSAINA ±1 dB)
43
28
dB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 115
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Electrical Specifi cations II, TA = +25°C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 μF
Parameter
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Units
Deviation vs Temperature: (Over full temperature range -40°C to 85°C. Deviation is measured from reference, which is CW input at 25°C
Differential Input Interface with 1:1 Balun Transformer (over full input frequency range)
± 0.6
dB
Wideband Single-Ended Input Interface suitable for input signal frequencies below 1000 MHz
± 0.5
dB
Tuned Single-Ended Input Interface Suitable for input signal frequencies above 1000 MHz
± 0.6
dB
Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power,
VTGT=2V)
POWER DETECTORS - SMT
12
Input Signal Frequency
100
500
900
1900
2200
3000
3500
3900
MHz
256QAM (2 Mbps, 8dB Crest Factor)
-0.13
-0.1
-0.1
-0.1
-0.1
-0.1
-0.3
-0.3
mV/dB
WCDMA Single Carrier
(Test Model 1 with 64DPCH)
-0.3
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
dBm
WCDMA 2 Carrier
(Test Model 1 with 64DPCH)
-0.5
-0.5
-0.4
-0.4
-0.3
-0.4
-0.4
-0.4
dBm
Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power,
VTGT=1V)
Input Signal Frequency
100
500
900
1900
2200
3000
3500
3900
MHz
256QAM (2 Mbps, 8dB Crest Factor)
0.1
0.1
0.1
0.1
0.1
0.1
-0.2
-0.1
dB
WCDMA Single Carrier
(Test Model 1 with 64DPCH)
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
dB
WCDMA 2 Carrier
(Test Model 1 with 64DPCH)
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
dB
Differential Input Configuration Logarithmic Slope and Intercept
Input Signal Frequency
100
500
900
1900
2200
3000
3500
3900
MHz
Logarithmic Slope
37.3
37.1
37
36
36
36.1
36.2
38.2
mV/dB
Logarithmic Intercept
-70
-70
-69.5
-72
-71.5
-68.5
-68.5
-64
dBm
Max. Input Power at +-1dB Error
12
14
13
15
15
13
-5
-8
dBm
Min. Input Power at +-1dB Error
-56
-55
-56
-56
-56
-52
-52
-49
dBm
Single Ended Input Configuration Logarithmic Slope and Intercept
Input Signal Frequency
100
900
1800 ± 300
2200 ± 300
3600 ± 300
MHz
Logarithmic Slope
38.2
37.9
36.6
35.4
36.8
mV/dB
Logarithmic Intercept
-67
-67.5
-67
-67
-64.5
dBm
Max. Input Power at +-1dB Error
14
6
15
15
12
dBm
Min. Input Power at +-1dB Error
-56
-56
-56
-54
-49
dBm
iPAR Feature: INS[A,B] outputs follow Amplitude Modulated Envelope Power, scaled to Average (RMS) Signal Power
INS[A,B] and IREF[A,B] are measured with Rext = 3.9 kΩ and 50 kΩ active scope probe
IREF[A,B] Output Voltage
1.6
INS[A,B] Output Voltage, with CW Input Signal (EAR = 1: Reference Condition)[1]
1.6
V
INS[A,B] Scaling Factor (SF) with VTGT = 2V
190
mV
mV
INS[A,B] Scaling Factor (SF) with VTGT = 1V
95
INS[A,B] Output: Variation over Temperature (-40C to 85C)
±2
%
INS[A,B] Output: 3 dB Video BW
35
MHz
[1] EAR: Amplitude Modulated Envelope Signal Power-to-Average (RMS) Signal Power Ratio; EAR = 1 for CW signals
12 - 116
V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMS [A,B] vs. Pin with Different
Modulations @ 1900 MHz, VTGT= 1V
RMS [A,B] Error vs. Pin with Different
Modulations @ 1900 MHz, VTGT= 1V
4
2
CW
WCDMA 1 Carrier
WCDMA 2 Carrier
256QAM
1.5
Ideal
3
WCDMA1 Carrier
2.5
WCDMA 2 Carrier
256QAM
1
ERROR (dB)
RMSA (RMSB) (V)
CW
2
1.5
0.5
0
-0.5
1
-1
0.5
-1.5
0
-60
-50
-40
-30
-20
-10
0
-2
-60
10
-50
-40
-20
-10
0
10
Logarithmic Error wrt to CW Response
@ 1900 MHz for Different Modulation
Schemes, VTGT= 2V
Logarithmic Error wrt to CW Response
@ 1900 MHz for Different Modulation
Schemes, VTGT= 1V
1.2
2
1
WCDMA 1 Carrier
WCDMA 2 Carrier
256QAM
WCDMA 1 Carrier
WCDMA 2 Carrier
256QAM
1.5
ERROR (dB)
0.8
0.6
1
0.4
0.5
0.2
0
-60
-50
-40
-30
-20
12
INPUT POWER (dBm)
INPUT POWER (dBm)
ERROR (dB)
-30
-10
0
0
-60
10
-50
INPUT POWER (dBm)
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
Table 3: Electrical Specifi cations III ,
HMC714LP5E Differential Confi guration, TA=25°C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF,
unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max.
POWER DETECTORS - SMT
3.5
Units
Differential Input Configuration
Input Network Return Loss
Input Resistance between INPA and INNA
Input Resistance between INPB and INN B
Input Voltage Range
up to 2.5 GHz[1]
> 10
dB
Between pins 2 and 3
220
Ohms
Between pins 6 and 7
220
Ohms
VDIFFINA = VINPA - VINNA and
VDIFFINB = VINPB -VINNB
2.25
V
RMSOUT [A,B] Output
Output Voltage Range
RL = 1kOhm, CL = 4.7pF [2]
0.4 to 3.2
V
Openloop Output Voltage Range
RMS-VSET disconnected for control
applications
0.4 to
Vcc-1
V
Source/Sink Current Compliance
Measured with 900 MHz input RF signal at
-30 dBm power
10/1.1
Output Slew Rate (rise/fall)
With CINT=0, Cofs=0
110/6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
6
10 V/sec
12 - 117
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Table 3: Electrical Specifi cations III ,
HMC714LP5E Differential Confi guration, TA=25°C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF,
unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max.
Units
VSET [A,B] Outputs
For control applications with nominal
slope/intercept settings
Input Voltage Range [2]
Input Resistance
0.4 to 3.2
V
15
kOhm
OUTP and OUTN Outputs
Output Voltage Range
12
RL=1kOhm, CL=4.7pF [2]
1 to 3.9
V
Openloop Output Voltage Range
OUTP-FBKA and OUTN-FBKB disconnected
for control applications
0.1 to
Vcc-0.9
V
Source/Sink Current Compliance
Measured with 900 MHz input RF signal at
-30 dBm power
20/4.2
mA
VLVL , Common Mode Reference Level for OUT[P,N]
POWER DETECTORS - SMT
Voltage Range
OUT[P,N]=FBK[A,B]
0
Input Resistance
5
6
VREF2 , Voltage Reference Output
Output Voltage
2.43
V
Temperature Sensitivity
0.15
mV/°C
5.5 / 2.6
mA
Source/Sink Current Compliance
VREF3 , Voltage Reference Output
Output Voltage
2.94
V
Temperature Sensitivity
0.15
mV/°C
0.15 / 0.7
mA
Source/Sink Current Compliance
TEMP, Temperature Sensor Output
Output Voltage
measured at 0°C
Temperature Sensitivity
Source/Sink Current Compliance
0.6
V
2.2
mV/°C
1.7 / 0.5
mA
ENX Logic Input, Power Down Control
Input High Voltage
0.7*VCC
V
Input Low Voltage
0.3*VCC
Input Capacitance
0.5
V
pF
Power Supply
Supply Voltage
Supply Current with no input power
Supply Current with 0dBm at one channel
Supply Current with 0dBm at both
channels
Standby Mode Supply Current
4.5
115 mA nominal at -40°C; 153mA nominal
at 85°C
128 mA nominal at -40°C; 166mA nominal
at 85°C
5
5.5
V
138
mA
150
mA
164
mA
6.5
mA
[1] Performance of differential input configuration is limited by the balun. Baluns used are M/A-COM ETC1-1-13 specified 4.5 MHz to
3000 MHz
[2] For nominal slope/intercept setting, please see application section to change this range
12 - 118
V
kOhm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA & Error vs. Pin @ 100 MHz [1]
RMSB & Error vs. Pin @ 100 MHz [1]
4
4
2
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
-30
-20
-10
-1
-2
ERR +25C
ERR +85C
ERR - 40C
0
-60
-50
-40
4
RMSB (V)
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
0
0
2
-1
-60
-4
-50
-40
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
-4
10
3
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
2
1
0
2
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
-3
0
0
RMSB (V)
0
INPUT POWER (dBm)
10
-3
-4
0
-60
ERROR (dB)
1
-10
0
4
3
ERROR (dB)
RMSA (V)
2
2
-20
-10
4
3
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
-30
-20
RMSB & Error vs. Pin @ 900 MHz [1]
4
-40
-30
INPUT POWER (dBm)
4
-50
-3
0
10
RMSA & Error vs. Pin @ 900 MHz [1]
-60
-2
ERR +25C
ERR +85C
ERR - 40C
INPUT POWER (dBm)
3
2
1
-3
0
3
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
1
-4
-10
10
ERROR (dB)
0
2
-20
0
4
3
ERROR (dB)
RMSA (V)
2
1
-30
-10
4
3
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
-40
-20
RMSB & Error vs. Pin @ 500 MHz [1]
4
-50
-30
INPUT POWER (dBm)
RMSA & Error vs. Pin @ 500 MHz [1]
-60
12
-4
0
10
INPUT POWER (dBm)
3
-3
POWER DETECTORS - SMT
-40
0
1
-4
-50
1
2
-3
0
-60
RMSB (V)
0
2
ERROR (dB)
1
2
3
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
3
ERROR (dB)
RMSA (V)
3
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
3
4
4
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] CW Input Waveform
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 119
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA & Error vs. Pin @ 1900 MHz [1]
4
4
-1
RMSB (V)
0
-2
1
ERR +25C
ERR +85C
ERR - 40C
-40
-30
-20
-10
0
0
-1
1
-4
-50
1
2
-60
-4
-50
-40
-2
ERR +25C
ERR +85C
ERR - 40C
0
-10
0
0
2
-1
-60
-4
-50
-40
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
RMSB (V)
0
-4
0
10
3
2
1
0
2
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
-3
-4
0
-60
-50
-40
-30
-20
-10
0
INPUT POWER (dBm)
[1] CW Input Waveform
12 - 120
10
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
-3
0
INPUT POWER (dBm)
0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
ERROR (dB)
1
-10
-10
4
3
ERROR (dB)
RMSA (V)
2
2
-20
-20
4
3
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
-30
-30
RMSB & Error vs. Pin @ 3000 MHz [1]
4
-40
-3
INPUT POWER (dBm)
4
-50
-2
ERR +25C
ERR +85C
ERR - 40C
0
10
RMSA & Error vs. Pin @ 3000 MHz [1]
-60
2
1
INPUT POWER (dBm)
3
3
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
1
-4
-20
10
4
3
RMSB (V)
0
-30
0
ERROR (dB)
RMSA (V)
2
2
-40
-10
4
ERROR (dB)
POWER DETECTORS - SMT
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
-50
-20
RMSB & Error vs. Pin @ 2200 MHz [1]
4
4
-60
-30
INPUT POWER (dBm)
RMSA & Error vs. Pin @ 2200 MHz [1]
1
-3
0
10
INPUT POWER (dBm)
3
-2
ERR +25C
ERR +85C
ERR - 40C
-3
0
2
ERROR (dB)
1
3
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
3
ERROR (dB)
RMSA (V)
2
2
-60
4
4
3
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
3
12
RMSB & Error vs. Pin @ 1900 MHz [1]
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA & Error vs. Pin @ 3500 MHz [1]
4
4
2
RMSB (V)
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
-30
-20
-10
-1
-2
ERR +25C
ERR +85C
ERR - 40C
0
-60
-50
-40
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
RMSB (V)
-1
-2
1
ERR +25C
ERR +85C
ERR - 40C
0
1
0
2
-1
-2
ERR +25C
ERR +85C
ERR - 40C
-60
-4
-50
-40
Out P Err +25C
Out P Err +85C
Out P Err -40C
Out N Err +25C
Out N Err +85 C
Out N Err -40C
-10
INPUT POWER (dBm)
0
10
OUT[P,N](V)
OUT[P,N](V)
0
-20
10
Out P
3
2
2
0
-2
1
-4
0
-60
Out P Err +25C
Out P Err +85C
Out P Err -40C
Out N Err +25C
Out N Err +85 C
Out N Err -40C
ERROR (dB)
0
ERROR (dB)
2
-30
0
4
Out P
2
-40
-10
4
Out N
3
-50
-20
OUT [P,N] & Error vs. Pin @ 500 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
4
4
-60
-30
INPUT POWER (dBm)
OUT [P,N] & Error vs. Pin @ 100 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
1
-3
0
10
INPUT POWER (dBm)
Out N
2
1
-4
0
3
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
-3
-10
10
ERROR (dB)
0
-20
0
4
3
ERROR (dB)
RMSA (V)
2
2
-30
-10
4
3
1
-40
-20
RMSB & Error vs. Pin @ 3900 MHz [1]
4
4
-50
-30
INPUT POWER (dBm)
RMSA & Error vs. Pin @ 3900 MHz [1]
-60
12
-4
0
10
INPUT POWER (dBm)
3
-3
POWER DETECTORS - SMT
-40
0
1
-4
-50
1
2
-3
0
2
ERROR (dB)
0
3
Ideal
RMSB +25C
RMSB +85C
RMSB - 40C
3
ERROR (dB)
1
2
-60
4
4
3
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
3
RMSA (V)
RMSB & Error vs. Pin @ 3500 MHz [1]
-2
-4
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] CW Input Waveform
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 121
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
OUT [P,N] & Error vs. Pin @ 900 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
4
4
0
Out P Err +25C
Out P Err +85C
Out P Err -40C
Out N Err +25C
Out N Err +85 C
Out N Err -40C
0
-50
-40
-30
-20
-10
0
OUT[P,N] (V)
2
3
2
2
0
-2
1
-4
0
10
Out P Err +25C
Out P Err +85C
Out P Err -40C
Out N Err +25C
Out N Err +85 C
Out N Err -40C
-50
-40
Out P Err +25C
Out P Err +85C
Out P Err -40C
Out N Err +25C
Out N Err +85 C
Out N Err -40C
-10
0
OUT[P,N](V)
OUT[P,N](V)
0
-20
4
2
2
0
-2
1
-4
0
10
Out P Err +25C
Out P Err +85C
Out P Err -40C
Out N Err +25C
Out N Err +85 C
Out N Err -40C
-50
-40
Out P Err +25C
Out P Err +85C
Out P Err -40 C
Out N Err +25C
Out N Err +85C
Out N Err -40 C
INPUT POWER (dBm)
0
10
OUT[P,N] (V)
OUT[P,N](V)
0
-10
Out P
3
2
2
0
-2
1
-4
0
-60
Out P Err +25C
Out P Err +85C
Out P Err -40 C
Out N Err +25C
Out N Err +85C
Out N Err -40 C
-50
-40
-30
-20
-10
-2
-4
0
INPUT POWER (dBm)
[1] CW Input Waveform
12 - 122
10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
ERROR (dB)
0
ERROR (dB)
2
-20
0
4
Out N
2
-30
-10
4
Out P
3
-40
-20
OUT [P,N] & Error vs. Pin @ 3900 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
4
-50
-30
INPUT POWER (dBm)
4
-60
-2
-4
-60
OUT [P,N] & Error vs. Pin @ 3500 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
1
Out P
3
INPUT POWER (dBm)
Out N
10
ERROR (dB)
0
ERROR (dB)
2
-30
0
4
Out P
2
-40
-10
Out N
3
-50
-20
OUT [P,N] & Error vs. Pin @ 3000 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
4
4
-60
-30
INPUT POWER (dBm)
OUT [P,N] & Error vs. Pin @ 2200 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
1
-2
-4
-60
INPUT POWER (dBm)
Out N
Out P
ERROR (dB)
2
-60
POWER DETECTORS - SMT
Out N
Out P
3
1
4
4
ERROR (dB)
OUT[P,N](V)
Out N
12
OUT [P,N] & Error vs. Pin @ 1900 MHz,
INPA Power Swept, INPB Fixed Power @
-25 dBm [1]
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 100 MHz [1][2]
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 500 MHz [1][2]
60
60
+25C
+85C
-40C
20
0
-20
-40
20
0
-20
-40
-45
-35
-25
-15
-5
5
-60
-55
15
-45
-35
Input Power (dBm)
15
+25C
+85C
-40C
40
RMSA-RMSB (mV)
RMSA-RMSB (mV)
5
60
+25C
+85C
-40C
40
20
0
-20
-40
20
0
-20
-40
-45
-35
-25
-15
-5
5
-60
-55
15
-45
-35
Input Power (dBm)
-25
-15
-5
5
15
Input Power (dBm)
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 2200 MHz [1][2]
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 3000 MHz [1][2]
60
12
60
+25C
+85C
-40C
+25C
+85C
-40C
40
RMSA-RMSB (mV)
40
RMSA-RMSB (mV)
-5
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 1900 MHz [1][2]
60
20
0
-20
-40
-60
-55
-15
Input Power (dBm)
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 900 MHz [1][2]
-60
-55
-25
POWER DETECTORS - SMT
-60
-55
+25C
+85C
-40C
40
RMSA-RMSB (mV)
RMSA-RMSB (mV)
40
20
0
-20
-40
-45
-35
-25
-15
Input Power (dBm)
-5
5
15
-60
-55
-45
-35
-25
-15
-5
5
15
Input Power (dBm)
[1] CW Input Waveform
[2] Differential Input Configuration. Baluns selected for matching performance, mismatch between channels is limited by the input
baluns.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 123
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 3500 MHz [1][2]
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 3900 MHz [1][2]
80
80
12
60
+25C
+85C
-40C
40
RMSA-RMSB (mV)
RMSA-RMSB (mV)
60
20
0
-20
40
20
0
-20
-40
-40
-60
-60
-80
-55
-45
-35
-25
-15
-5
5
-80
-55
15
+25C
+85C
-40C
-45
-35
0.5GHz
0.9GHz
1.9GHz
2.2GHz
3.0GHz
3.9GHz
3
4
Channel B fixed at
-45dBm for f<3GHz
-40dBm for f=3.9GHz
3
2
1
15
Channel A fixed at
-45dBm for f<3GHz
-40dBm for f=3.9GHz
1
-25
-20
-15
-10
-5
0
5
10
0
-30
15
-25
-20
-15
Input Power (dBm)
-10
-5
0
5
10
15
Input Power (dBm)
RMSA Out vs. Pin over Frequency,
with SE Wideband Tune [1]
RMSA Out Error vs. Pin over Frequency,
with SE Wideband Tune [1]
4
4
Ideal
100MHz
300MHZ
500MHz
700MHz
900MHz
3
2.5
2
2
1.5
1
0
-1
1
-2
0.5
-3
-50
-40
100MHz
300MHz
500MHz
700MHz
900MHz
3
ERROR (dB)
3.5
RMSA(V)
5
0.5GHz
0.9GHz
1.9GHz
2.2GHz
3.0GHz
3.9GHz
5
Error (dB)
4
0
-60
-5
6
5
0
-30
-15
Interference to an Input Signal (INA
Power Fixed) with Interfering Signal on
the other Channel (INB Power Swept) [1]
6
2
-25
Input Power (dBm)
Interference to an Input Signal (INB
Power Fixed) with Interfering Signal on
the other Channel (INA Power Swept) [1]
Error (dB)
POWER DETECTORS - SMT
Input Power (dBm)
-30
-20
-10
INPUT POWER (dBm)
0
10
-4
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] CW Input Waveform
[2] Differential Input Configuration. Baluns selected for matching performance, mismatch between channels is limited by the input
baluns.
12 - 124
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA-RMSB, Channel Matching vs.
Pin over Frequency, with SE Wideband
Tune [1]
RMSA-RMSB, Channel Matching vs.
Pin over Temperature @ 500 MHz, with SE
Wideband Tune [1]
60
60
100MHz
RMSA-RMSB (mV)
RMSA-RMSB (V)
500MHz
700MHz
20
900MHz
0
-20
-40
-60
-50
25
85C
-40C
40
300MHz
20
0
-20
-40
-40
-30
-20
-10
0
-60
-55
10
12
-45
-35
-25
RMSA Out & Error vs. Pin over
Temperature @ 500 MHz with SE Wideband Tune [1]
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
4
3
3.5
2
3
0
2
-1
1
ERR +25C
ERR +85C
ERR - 40C
ERROR (dB)
RMSA (V)
4
1
0
-40
-30
-20
-10
0
2
1.5
1
-3
0.5
0
-60
10
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
INPUT POWER (dBm)
RMSA Out Error vs. Pin over Frequency
with 2200 MHz SE Tune [1]
RMSA-RMSB, Channel Matching vs. Pin
over Frequency, with 2200 MHz SE Wideband Tune [1]
60
4
1900MHz
2000MHz
2100MHz
2200MHz
2300MHz
2400MHz
2500MHz
2
1
1900MHz
2000MHz
2100MHz
2200MHz
2300MHz
2400MHz
2500MHz
40
RMSA-RMSB (V)
3
ERROR (dB)
15
Ideal
1900MHz
2000MHZ
2100MHz
2200MHz
2300MHz
2400MHz
2500MHz
2.5
-2
-4
-50
5
RMSA Out vs. Pin over Frequency , with
2200 MHz SE Tune [1]
RMSA (V)
4
-60
-5
Input Power (dBm)
INPUT POWER (dBm)
3
-15
POWER DETECTORS - SMT
40
0
-1
20
0
-20
-2
-40
-3
-4
-60
-50
-40
-30
-20
-10
INPUT POWER (dBm)
0
10
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] CW Input Waveform
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 125
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA-RMSB, Channel Matching vs. Pin
over Temperature, with 2200 MHz SE
Tune [1]
RMSA Out & Error vs. Pin
over Temperature @ 2200 MHz, with
2200 MHz SE Tune [1]
60
40
3
Ideal
RMSA +25C
RMSA +85C
RMSA - 40C
3
2
RMSA (V)
20
0
1
0
2
-1
-20
-2
1
ERR +25C
ERR +85C
ERR - 40C
-40
12
-60
-55
-4
0
-45
-35
-25
-15
-5
5
15
-60
-50
-40
-20
-10
0
10
RMSA Out Error vs. Pin over Frequency,
with 1800 MHz SE Tune [1]
4
4
3.5
1500MHz
1600MHz
1700MHz
1800MHz
1900MHz
2000MHz
2100MHz
3
Ideal
1500MHz
1600MHZ
1700MHz
1800MHz
1900MHz
2000MHz
2100MHz
2.5
2
2
ERROR (dB)
3
1.5
1
0
-1
1
-2
0.5
-3
-50
-40
-30
-20
-10
0
-4
-60
10
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
INPUT POWER (dBm)
RMSA-RMSB, Channel Matching vs.
Pin over Frequency, with 1800 MHz SE
Tune [1]
RMSA Out vs. Pin over Frequency, with
3600 MHz SE Tune [1]
60
4
1500MHz
1600MHz
1700MHz
1800MHZ
1900MHz
2000MHz
2100MHz
20
3.5
Ideal
3300MHz
3400MHZ
3500MHz
3600MHz
3700MHz
3800MHz
3900MHz
3
RMSA (V)
40
RMSA-RMSB (V)
-30
INPUT POWER (dBm)
RMSA Out vs. Pin over Frequency, with
1800 MHz SE Tune [1]
RMSA (V)
POWER DETECTORS - SMT
Input Power (dBm)
0
-60
-3
0
-20
2.5
2
1.5
1
-40
-60
-50
0.5
-40
-30
-20
-10
INPUT POWER (dBm)
0
10
0
-60
-50
-40
-30
-20
-10
INPUT POWER (dBm)
[1] CW Input Waveform
12 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
0
10
ERROR (dB)
RMSA-RMSB (mV)
4
4
25
85C
-40C
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMSA Out Error vs. Pin over Frequency,
with 3600 MHz SE Tune[1]
RMSA - RMSB, Channel Matching vs.
Pin over Temperature, with 3600 MHz SE
Tune[1]
60
4
3300MHz
3400MHz
3500MHz
3600MHz
3700MHz
3800MHz
3900MHz
2
1
3300MHz
3400MHz
3500MHz
3700MHz
3600MHZ
3800MHz
3900MHz
40
RMSA-RMSB (V)
0
-1
20
0
-20
-2
-40
-3
-4
-60
-50
-40
-30
-20
-10
0
-60
-50
10
-40
-30
INPUT POWER (dBm)
0
10
Intercept vs. Frequency Over
Temperature[1]
-50
-50
4.5V
5.0V
5.5V
+25C
+85C
-40C
-55
INTERCEPT (dBm)
-55
INTERCEPT (dBm)
-10
-60
-65
-70
-75
-60
-65
-70
-75
-80
-80
0
500
1000
1500
2000
2500
12
INPUT POWER (dBm)
Intercept vs. Frequency Over Supply
Voltage[1]
3000
3500
4000
0
500
1000
FREQUENCY (MHz)
1500
2000
2500
3000
3500
4000
FREQUENCY (MHz)
Slope vs. Frequency Over Supply
Voltage[1]
Slope vs. Frequency Over Temperature[1]
50
50
4.5V
5.0V
5.5V
+25C
+85C
-40C
45
SLOPE (mV/dB)
45
SLOPE (mV/dB)
-20
POWER DETECTORS - SMT
RMSA ERROR (dB)
3
40
35
40
35
30
30
0
500
1000
1500
2000
2500
FREQUENCY (MHz)
3000
3500
4000
0
500
1000
1500
2000
2500
3000
3500
4000
FREQUENCY (MHz)
[1] CW Input Waveform
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 127
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Input Return Loss [1]
RMS Error vs. Crest Factor Over VTGT
0
-5
-0.5
-1
-1.5
-2
VTGT=0.5V
VTGT=1V
VTGT=2V
VTGT=3V
-2.5
12
RETURN LOSS (dB)
RMSA/RMSB ERROR (dB)
0
-3
0
2
4
6
25C
+85C
-40C
-10
-15
-20
-25
-30
Defined in large part by balun:
M/A-Com balun#ETC1-1-113;
-35
8
10
12
4.5MHz to 3000MHz
-40
14
0
CREST FACTOR (dB)
1
2
3
4
iPAR Output & Input RF Signal Envelope
vs. Time for an Input Crest Factor of
9.03 dB @ 1900 MHz [2]
INS [A,B] (V)
2.5
1.5
IPAR Output
1.75
1
1.25
0.5
0.75
0
0.25
-0.5
CHANNEL A
CHANNEL B
INS [A,B] (V)
2.25
iPAR Output with an Input Crest Factor of
9.03 dB, Channel [A,B] @ 1900 MHz [2]
INPUT RF SIGNAL ENVELOPE (V)
Input RF Signal Envelope
0
1
2
3
2
1.5
1
4
5
0
1
2
Time (usec)
iPAR Output & Input RF Signal Envelope
vs. Time for an Input Crest Factor of
12.04 dB @ 1900 MHz [2]
INS [A,B] (V)
2.4
3.4
IPAR Output
2
2.6
1.6
1.8
1.2
1
0.8
0.2
0.4
-0.6
Input RF Signal Envelope
0
0
1
2
3
4
TIME (μs)
5
6
7
8
4
2.5
2
1.5
CHANNEL A
CHANNEL B
-1.4
1
0
1.6
3.2
4.8
TIME (us)
6.4
[1] CW Input Waveform
[2] RF Input Power @ -20 dBm
12 - 128
5
3
INPUT RF SIGNAL ENVELOPE (V)
4.2
2.8
3
TIME (us)
iPAR Output with an Input Crest Factor of
12.04 dB, Channel [A,B] @ 1900 MHz [2]
INS [A,B] (V)
POWER DETECTORS - SMT
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
iPAR Output with an Input Crest Factor of
9.03 dB, Channel A over Temp
@ 1900 MHz [1]
iPAR Output with an Input Crest Factor of
9.03 dB, Channel B over Temp
@ 1900 MHz [1]
2.5
2.5
2
INSA (V)
INSB (V)
2
1.5
+25C
+85C
-40C
+25C
+85C
-40C
1
1
0
1
2
3
TIME (us)
4
0
5
iPAR Output with an Input Crest Factor of
12.04 dB, Channel A over Temp
@ 1900 MHz [1]
3
TIME (us)
4
5
3.5
+25C
+85C
-40C
3
+25C
+85C
-40C
3
2.5
INSB (V)
INSA (V)
2
iPAR Output with an Input Crest Factor of
12.04 dB, Channel B over Temp
@ 1900 MHz [1]
3.5
2
1.5
2.5
2
1.5
1
1
0
1.6
3.2
4.8
TIME (us)
6.4
8
iPAR Feature Peak-to-Average Power
Detection Confi guration (REXT = 500kΩ,
CEXT = 100 nF)
0
1.6
3.2
4.8
TIME (us)
6.4
8
iPAR Feature Peak-to-Average Power
Detection Confi guration (CEXT = 100 nF)
3.4
12
3.4
3.2
3.2
INSA
Linear Fit
3
VTGT=2V Rext=100kohm
VTGT=2V Rext=500kohm
VTGT=1V Rext=500kohm
3
2.8
INSA (V)
2.8
INSA (V)
1
POWER DETECTORS - SMT
1.5
2.6
VTGT=2V
2.4
2.2
256QAM (1Mbps)
Crest Factor~7.8dB
2.6
2.4
2.2
VTGT=1V
2
Single Tone
(CW) Inputs
2
1.8
1.8
Single Tone (CW) Inputs
1.6
1
2
3
4
5
6
7
8
9
10
PEAK TO AVERAGE POWER RATIO (PAR)
11
12
1.6
2
3
4
5
6
7
8
9 10 11
INPUT CREST FACTOR (dB)
12
13
14
[1] RF Input Power @ -20 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 129
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Output Response
Rise Time @ 1900 MHz, CINT [A,B] = Open
Output Response
Rise Time @ 1900 MHz, CINT [A,B] = 10 nF
3
4
3.5
RMS[A,B] (V)
RMS[A,B] (V)
2.5
10dBm
0dBm
-10dBm
-20dBm
-30dBm
2.5
10dBm
0dBm
-10dBm
-20dBm
-30dBm
3
2
1.5
2
1.5
1
1
0.5
0.5
12
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1
5
10
15
20
12 - 130
25
30
35
40
45
50
TIME (μs)
Output Response
Fall Time @ 1900 MHz, CINT [A,B] = Open
Output Response
Fall Time @ 1900 MHz, CINT [A,B] = 10 nF
3
3
10dBm
0dBm
-10dBm
-20dBm
-30dBm
2
10dBm
0dBm
-10dBm
-20dBm
-30dBm
2.5
RMS[A,B] (V)
2.5
RMS[A,B] (V)
POWER DETECTORS - SMT
TIME (μs)
1.5
1
0.5
2
1.5
1
0.5
0
0
0
1
2
3
4
5
6
7
8
TIME (μs)
9
10
0
20
40
60
80
100
120
140
160
180
200
TIME (μs)
Absolute Maximum Ratings
Supply Voltage
5.6V
RF Input Power
20 dBm
Channel / Junction Temperature
125 °C
Continuous Pdiss (T = 85°C)
(Derate 50 mW/°C above 85°C)
2 Watts
Thermal Resistance (Rth)
(junction to ground paddle)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Outline Drawing
POWER DETECTORS - SMT
12
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HMC APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC714LP5
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC714LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
H714
XXXX
[2]
H714
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 131
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Pin Descriptions
Pin Number
Function
Description
1, 5, 8
VCCA,
VCCBIAS,
VCCB
Bias Supply. Connect supply voltage to these pins
with appropriate filtering.
GND
Package bottom has an exposed metal paddle
that must be connected to RF/DC ground.
POWER DETECTORS - SMT
12
12 - 132
2, 3
INPA, INNA
Channel A RF Inputs, Connect RF to INNA
through a 1:1 balun for differential configuration.
6, 7
INNB, INPB
Channel B RF Inputs, Connect RF to INNB
through a 1:1 balun for differential configuration.
4
ENX
Disable pin. Connect to GND for normal
operation. Applying voltage V > 0.8 Vcc
will initiate power saving mode.
9, 32
COFB, COFA
Input high pass filter capacitor. Connect to
common via a capacitor to determine 3 dB point of
input signal high-pass filter. See Application Note
section.
10, 11
N/C
These pins are not connected internally.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Pin Descriptions (Continued)
Function
Description
12
VREF2
2.5V Reference voltage output.
13
VLVL
Reference level input for OUTP and OUTN.
Connect to VREF for normal operation.
14, 27
CINTB,
CINTA
Connection for ground referenced loop filter
integration capacitor for channels A and B.
See application schematic.
15, 26
IREFB,
IREFA
Reference DC Voltage for INSB - INSA to replicate
voltage at no input modulation case.
16, 25
INSB, INSA
Instantaneous Power Output for channels A and B
continuous tracking of Input Power Envelope.
17, 26
VSETB,
VSETA
VSET inputs. Set point inputs for controller mode.
18, 23
RMSB,
RMSA
Logarithmic outputs that convert the input power
to a DC level for channel A and channel B.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12
POWER DETECTORS - SMT
Pin Number
12 - 133
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Pin Descriptions (Continued)
Pin Number
Function
Description
FBKB
Feedback through 3.5K Ohms to the negative
terminal of the integrated Op Amp driving OUTN
OUTN
Output providing the difference of RMS outputs
using an Op Amp. For normal operation,
connected to FBKB to provide the function:
OUTN = RMSB - RMSA + VLVL
21
OUTP
Output providing the difference of RMS outputs
using an Op Amp. For normal operation,
connected to FBKA to provide the function:
OUTP = RMSA - RMSB + VLVL
22
FBKA
Feedback through 3.5K Ohms to the negative
terminal of the integrated Op Amp driving OUTP
28
VTGT
This voltage input changes the logarithmic
intercept point. Use of lower target voltage
reduces error for complex signals with large crest
factors. Normally connected to VREF3 via resistor
voltage divider. See Application Note section.
29
VREF3
3V Reference voltage output for use with VTGT.
See Application Note section.
30
TEMP
Temperature sensor output. See Application Note
section.
19
20
POWER DETECTORS - SMT
12
12 - 134
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Evaluation PCB - Wideband Single-Ended
List of Materials for Evaluation PCB 121864 [1]
Item
Item
Description
SMA Connector
U1
HMC714LP5(E) Single-Ended
Dual RMS Power Detector
DC Pin
PCB [2]
121862 Evaluation PCB
Description
J2, J5, J9, J11,
J13, J14, J16, J18
J3, J4, J6 - J8,
J10, J17, J19 - J25
C1, C2, C5, C6, C9, C28
1 nF Capacitor, 0402 Pkg.
C3, C8, C10, C29
100 pF Capacitor, 0402 Pkg.
C4, C7, C11, C26, C27, C30
100 nF Capacitor, 0402 Pkg.
R1, R3
68 Ohm Resistor, 0402 Pkg.
R2
10K Ohm Resistor, 0402 Pkg.
R4, R7, R15 - R18, R27,
R31, R34
0 Ohm Resistor, 0402 Pkg.
R10, R12, R20, R23
3.92K Ohm Resistor, 0402 Pkg.
R24
61.9K Ohm Resistor, 0402 Pkg.
R25
33K Ohm Resistor, 0402 Pkg.
R26
1K Ohm Resistor, 0402 Pkg.
POWER DETECTORS - SMT
12
The circuit board used in the final application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon
request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 135
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Application Circuit - Wideband Single-Ended
POWER DETECTORS - SMT
12
12 - 136
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Evaluation PCB - Differential
List of Materials for Evaluation PCB 120339 [1]
Item
Description
J2, J5, J9, J11,
J13, J14, J16, J18
SMA Connector
J3, J4, J6 - J8,
J10, J17, J19 - J25
DC Pin
C1, C2, C5, C6, C9, C28
1 nF Capacitor, 0402 Pkg.
C3, C8, C10, C29
100 pF Capacitor, 0402 Pkg.
C4, C7, C11, C26,
C27, C30
100 nF Capacitor, 0402 Pkg.
Item
Description
T1, T2
Transformer, E-Series RF 1:1,
U1
HMC714LP5(E) Differential
Dual RMS Power Detector
PCB [2]
120336 Evaluation PCB
R25
33K Ohm Resistor, 0402 Pkg.
The circuit board used in the final application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon
request.
R26
1K Ohm Resistor, 0402 Pkg.
[1] Reference this number when ordering complete evaluation PCB
R1, R3
68.1 Ohm Resistor, 0402 Pkg.
R2
10K Ohm Resistor, 0402 Pkg.
R4, R7, R15 - R18, R27
0 Ohm Resistor, 0402 Pkg.
R10, R12, R20, R23
3.92K Ohm Resistor, 0402 Pkg.
R24
61.9K Ohm Resistor, 0402 Pkg.
POWER DETECTORS - SMT
12
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 137
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Application Circuit - Differential
POWER DETECTORS - SMT
12
12 - 138
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Application Information
Principle of Operation
VRMSOUT =
1
ln(ßkG2∫VIN2dt)
k
VRMS vs. PIN
4
VIN2
ßk
∫VIN2dt
-1 + iREF
Where ß is op-amp gain set via resistors on the Vset pin.
Pin = VRMS/[log-slope]+[log-intercept], dBm
Monolithic true-RMS detectors are in-effect analog calculators,
calculating the RMS value of the input signal, unlike other
types of power detectors which are designed to respond to the
RF signal envelope. At the core of an RMS detector is a fullwave rectifier, log/antilog circuit, and an integrator. The RMS
output signal is directly proportional to the logarithm of the
time-averaged VIN2. The bias block also contains temperature
compensation circuits which stabilize output accuracy over the
entire operating temperature range. The DC offset cancellation
circuit actively cancels internal offsets so that even very small
input signals can be measure accurately.
RMS OUTPUT VOLTAGE (V)
ViPAR =
m
Measured
Ideal
3
2
1
0
-65
-55
-45
-35
-25
-15
-5
5
15
INPUT POWER (dBm)
iPAR Output & Input RF Signal Envelope
vs. Time for an Input Crest Factor of
9.03 dB @ 1900 MHz [2]
2.25
1.5
INS [A,B] (V)
1.75
1
1.25
0.5
0.75
0
0.25
-0.5
INPUT RF SIGNAL ENVELOPE (V)
IPAR Output
The iPAR feature tracks the RF envelope and provides a signal
which is directly proportional to signal power, normalized to
average real power calculated by the RMS circuitry. Reading
both the iPAR and RMS output voltage signals provides a
very informative picture of the RF input signal: peak power,
average power, peak-to-average power, and RF wave-shape.
Simultaneous measurement of signal power and average
power is essential for taking full advantage of a receive signal
chain’s available dynamic range, while avoiding saturation, or
to maximize transmitter efficiency.
POWER DETECTORS - SMT
12
Input RF Signal Envelope
0
1
2
3
4
5
Time (usec)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 139
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Dual RMS Detection Channels
The HMC714LP5E integrates two HMC614LP4E RMS detection channels with shared bias and control circuitry. The
linear-in-dB channel outputs at the RMSA and RMSB pins provide RMS detection performance in terms of dynamic
range, temperature stability, and logarithmic linearity similar to Hittite’s HMC614LP4E with improved frequency
detection range extending up to 5.8 GHz. Proprietary design techniques enable extremely good matching between
channels (within less than 0.5 dB with single-ended cnfiguration) over a wide range of input frequencies with low
temperature drift.
Channel Difference Outputs @ 1900 MHz,
Channel A Power Swept,
Channel B @ -25 dBm
4
3.5
3
OUTPUT (V)
POWER DETECTORS - SMT
12
HMC714LP5E also provides “channel difference” outputs via pins OUTP and OUTN that can be either used differentially
or single-ended. The VLVL input is used to set the common mode reference level for those outputs. On the Hittite
evaluation board, the VLVL pin is shorted to VREF2 output to provide a nominal bias voltage of 2.5V; but any external
bias voltage can be used to set VLVL.
2.5
2
1.5
1
OUTP
OUTN
RMSA
RMSB
0.5
0
-65
-55
-45
-35
-25
-15
-5
5
15
CHANNEL A INPUT POWER (dBm)
A ratio of two signal powers is a simple difference in the log domain. The OUTP and OUTN outputs can provide a
direct read of input signal power ratio between the signals presented to the two power detection channels.
When OUTP is connected directly to FBK A
OUTP = RMSA - RMSB + VLVL
And when OUTN is connected directly to FBKB
OUTN = RMSB - RMSA+VLVL
With the channels of HMC714LP5E having very low mismatch, channel outputs RMSA and RMSB track very closely
over temperature. The difference operation also allows the OUTP and OUTN to reject common-mode changes in
channels A and B.
HMC714LP5E also features iPAR output on each power detector. The RMSA and RMSB outputs provide a read of
average input signal (i.e True RMS power). The INSA and INSB pins are iPAR outputs providing a simultaneous read
of input signal Peak Power, Peak-to-Average Ratio, and RF waveshape. Refer to the section under “iPAR – Envelope
Power Normalized To Average Power” for more details on iPAR measurements.
12 - 140
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Channel Matching
0.16
0.12
RMSA-RMSB (V)
0
-0.08
12
Using wideband single-ended input interface
-0.12
-0.16
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
Channel Matching [RMSA-RMSB]
@ 900 MHz
0.16
0.12
0.08
0.04
0
-0.04
-0.08
Using balun input interface
-0.12
-0.16
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
Channel Matching [RMSA-RMSB] in
Single Ended Confi guration tuned
@ 3.6 GHz
0.16
0.16
0.12
0.12
0.08
0.08
RMSA-RMSB (V)
RMSA-RMSB (V)
0.04
-0.04
Channel Matching [RMSA-RMSB]
@ 3.5 GHz
0.04
0
-0.04
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
3.8 GHz
3.9 GHz
0.04
0
-0.04
-0.08
Using single-ended interface tuned for 3.6 GHz
-0.08
-0.12
-0.16
-50
0.1 GHz
0.5 Ghz
0.9 GHz
1.4 GHz
1.9 GHz
0.08
POWER DETECTORS - SMT
The HMC714LP5E provides industry leading channel
matching performance with the use of proprietary techniques.
The channel mismatch is typically less than 20 mV over the
specified temperature and frequency range when the singleended input interface is used. Hittite “differential” evaluation
kits use M/A Com’s ETC1-1-13 balun, which are designed
to work up to 3 GHz. At frequencies lower than 3 GHz, the
mismatch between the two input baluns cause a larger variation
between the channels when compared to the single-ended
interface (typically ±25 mV up to 900 MHz and ±50 mV up to
2700 MHz). The input impedance mismatch presented by the
balun at signal frequencies beyond 3 GHz will further increase
the channel-to-channel variation. The “single-ended” input
interface does not have this limitation. The “single-ended”
interface can utilize the full input signal bandwidth of the power
detector; however the “single-ended” input interface is tuned.
The differential or balun input interface is best suited to very
wideband power measurements (100 MHz to 3 GHz), whereas
the single-ended input interface is best suited to signal power
measurement over bandwidths up to ±300 MHz (for ±1 dB
error tolerance) in the hole RF frequency range.
Channel Matching [RMSA-RMSB] in
Wideband Single Ended Confi guration
RMSA-RMSB (V)
Single channel RMS detectors exhibit part-to-part
variations that tend to complicate simultaneous power
readings. Simultaneous signal power measurements are
particularly useful for automatic gain/level control and VSWR
measurements. When separate power detectors are used, the
lack of an accurate match between the power detectors will
produce measurement errors. Calibration and compensation
methods are required to counteract the differences between
the separate power detectors. The Dual RMS detector package
greatly simplifies that activity, and will reliably produce more
accurate measurements.
-0.12
Using balun input interface
-40
-30
-20
-10
INPUT POWER (dBm)
0
10
-0.16
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
12 - 141
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Input to Input Isolations with
ETC1-1-13 Baluns
Channel Isolation/Interface
Channel isolation/interference is grouped into two
categories:
0
-10
On-chip inter-channel interference, and
On-chip inter-channel interference, herein referred to as
“input-output channel isolation”, usually manifests itself as
drift on one detector output due to a relatively strong signal
present at the other detector input. Quantitatively, the inputoutput channel isolation is defined as the difference between
the input power levels at both channels when the interfering
(higher power level) channel causes a 1 dB measurement
drift in the interfered (lower power level) channel. Worst
case channel interference occurs when one channel has an
input signal level just over its detection threshold.
ISOLATION (dB)
-40
-50
-60
-70
-90
-100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
Interference to an Input Signal (INB
Power Fixed) with Interfering Signal on
the other Channel (INA Power Swept) [1]
3
2.5
0.5 GHz
0.9 GHz
1.9 GHz
2.7 GHz
3.9 GHz
5.8 GHz
2
1.5
1
0.5
Input-Output Channel isolation for HMC714LP5E is:
0
-30
55+ dB input-output isolation at 900 MHz
-25
-20
-15
-10
-5
0
5
10
15
CHANNEL A INPUT POWER (dBm)
45 dB input-output isolation up to 2.7 GHz
35 dB input-output isolation up to 5.8 GHz.
If the same signal frequency is injected into both channels
for this Input-Output Channel Isolation measurement, the
interference will manifest as a phase delay. A slight offset in
signal frequency between the two channels can be seen as a
ripple at the output of the channel with the lower power level
applied at its input. Peaks in the output ripple correspond
to the worst-case phase shift for input-output interference.
The frequency of the output ripple will be equal to the “beat”
frequency between the two channels. The magnitude of
the output ripple will depend on the integration and offset
capacitors connected to CINT and COFS pins, respectively.
The output ripple is reduced by increasing the value of
the integration capacitance (CINT), thereby decreasing
the integrator bandwidth. The data was collected using a
100kHz offset between the channels.
12 - 142
Input B->Input A
-30
-80
Interference to an Input Signal (INA
Power Fixed) with Interfering Signal on
the other Channel (INB Power Swept) [1]
3
ERROR IN CHANNEL A (dB)
POWER DETECTORS - SMT
12
Off-chip interference between channels should be
considered, especially at small signal levels, since
HMC714LP5E is capable of detecting a signal over a
very wide dynamic range (70 dB+). There are two main
mechanisms through which the interference between the
channels may affect measurement accuracy. The first
one is the direct coupling of the RF signal from one RF
channel input to the other RF channel input. Baluns on the
detector inputs usually contribute to inter-channel coupling,
as does PC board design and the quality of the soldered
connections.
ERROR IN CHANNEL B (dB)
Off-chip inter-channel interference.
Input A->Input B
-20
0.5 GHz
0.9 GHz
1.9 GHz
2.7 GHz
3.9 GHz
5.8 GHz
2.5
2
1.5
1
0.5
0
-30
-25
-20
-15
-10
-5
0
5
CHANNEL B INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
15
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Confi guration for the Typical Application
The RF inputs can be connected in either a differential or single-ended configuration: see “RF Input Interface” section
for details on each input configuration. With the appropriate input tuning components, the part can provide the full
performance with a single-ended input.
The RMSA & RMSB output signals are typically connected directly to VSETA & VSETB inputs, providing a Pin->VRMS
transfer characteristic slope of 36.5 mV/dBm at both channels; however the RMS output can be re-scaled to “magnify”
a specific portion of the input sensing range, and to fully utilize the dynamic range of the RMS output. Refer to the
section under the “log-slope and intercept” for details.
VTGT with a nominal value of 2V is typically generated from the VREF reference output of 3V; however the VTGT
voltage can be adjusted to optimize measurement accuracy, especially when measurement at higher crest factors is
important: see “Adjusting VTGT for greater precision” section for technical details.
Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy
absolute accuracy requirements: refer to the “System Calibration” section for more details.
The HMC714LP5E requires a single 5V supply connected to three pins: VCCA , VCCB, and VCCBIAS. Adequate power
supply decoupling is required on these pins. The supply pins should be decoupled to ground using two parallel
capacitors with the values shown in the application schematic. The capacitors should be placed close to the part (with
the smaller value as close as possible to the supply pin) and must provide a low impedance path to RF GND over the
entire input frequency range.
Temperature Sensor Interface
The HMC714LP5E provides a buffered PTAT temperature sensor output that provides a temperature scaling factor
of 2.2 mV/°C with a typical output voltage of 600 mV at 0°C. The output is capable of sourcing 1.5 mA.
TEMP Output
12
POWER DETECTORS - SMT
The INSA & INSB pins are the instantaneous peak-to-average ratio (iPAR) outputs; on each detector. This iPAR
measurement pulls it’s signal from the internals of the RMS detector, just before the RMS calculation is processed.
Each iPAR output (INSA & INSB) produces a voltage signal which provides a direct read of the RF signal AM envelope.
So between the simultaneous measurement of RMS power and iPAR on each power detector, a system can monitor
average power, peak power, peak-to-average power, and the RF waveshape. See the section under “iPAR Envelope
Power Normalized to Average Power” for application details.
0.85
0.8
TEMP (V)
0.75
TEMP
Ideal
0.7
0.65
0.6
0.55
0.5
-40 -30 -20 -10
0
10 20
30 40
50 60 70
80
90
TEMPERATURE (Celcius)
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12 - 143
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RF Input Interface
The INPA and INNA pins are differential inputs on one of two power detectors, which we will refer to as channel A.
INPB and INNB pins are differential inputs on the other power detector, channel B. The inputs for both channels can
be externally configured with differential or single-ended input. Power match components are placed on these input
terminals, along with DC blocking capacitors. The coupling capacitor values also set the lower spectral boundary of
the input signal bandwidth. The inputs can be reactively matched (refer to input return loss graphs), but a resistor
network should be sufficient for good wideband performance.
Differential Input Interface:
The value of RD (=RDA=RDB) depends on the balun used; if the balun is
50Ω on both sides of the SE-Diff conversion,
12
POWER DETECTORS - SMT
then RD
where
RM = the desired power match impedance in ohms.
For RM = 50Ω, RD = 67Ω ≈ 68Ω
Single-Ended Input Interface:
Tuned SE-interface: for signal frequencies > 900MHz
Choose L and C elements from the following graph for narrowband tuning of
the SE-interface:
R31/34 = 30Ω, R32/35 = 50Ω, C1/6 =1 nF
R30/33 = 270Ω,
Wideband SE-interface: for signal frequencies < 900 MHz
R31/34 = 0Ω, R32/35 = OPEN, R1/R3 = 68Ω,
R30/33 = Open
C2, C5 is 1 nF decoupling caps.
For wideband (un-tuned) input interfaces, choose the input decoupling capacitor values by first determining the
lowest spectral component the power detector is required to sense, ƒL.
Input decoupling
1 capacitor value
≈
p × f L × 3.2
farads, where ƒL is in Hertz.
Ex. If the power detector needs to sense down to 10 MHz, the decoupling capacitor value should be
1/(π*10E6*3.2) = 10 nF
A DC bias (Vcc-1.5V) is present on the INP[A,B] and IN[A,B] pins, and should not be overridden.
12 - 144
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HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RF Input Interface (Continued)
10
9
9
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
12
0
0
900
1400
1900
2400
2900
3400
3900
FREQUENCY (MHz)
RMS Output Interface and Transient Response
Output transient response is determined by the integration capacitances CINTA & CINTB and output load conditions.
Using larger values of CINT will narrow the operating bandwidth of the integrator, resulting in a longer averaging
time-interval and a more filtered output signal; however it will also slow the power detector’s transient response. A
larger CINT value favors output accuracy over speed. For the fastest possible transient settling times, leave the CINT
pins free of any external capacitance. This configuration will operate the integrator at its widest possible bandwidth,
resulting in short averaging time-interval and an output signal with little filtering. Most applications will choose to
have some external integration capacitance, maintaining a balance between speed and accuracy. Furthermore, error
performance over crest factor is degraded when CINT is very small (for CINT < 100 pF).
Modulation and deviation results in Electrical Specification Table 2 are provided with CINT = 0.1 uF.
Start by selecting CINT using the following expression, and then adjust the value as needed, based on the application’s
preference for faster transient settling or output accuracy.
CINT = 1500 uF/(2*π *ƒlam), in Farads, where ƒlam = lowest amplitude-modulation component frequency in Hertz
Example: when ƒlam = 10 kHz, CINT = 1500 μF/(2*π*1000) = 24E-9 Farads ~ 22 nF
POWER DETECTORS - SMT
10
TUNING INDUCTANCE (nH)
TUNING CAPACITANCE (pF)
Tuning, Single Ended Interface:
fc ± 300 MHz
Table: Transient response vs. CINT capacitance: with COFS = 0
CINT
RMS Rise - Time
over Dynamic Range
Pin = 0 dBm
Pin = -30 dBm
Pin = -10 dBm
0
35 nsec
120 nsec
200 nsec
1.18 usec
100 pF
80 nsec
410 nsec
720 nsec
1.26 usec
1 nF
780 nsec
3.3 usec
5.6 usec
7 usec
10 nF
7.8 usec
32.4 usec
54 usec
66.4 usec
RMS Fall - Time
Pin = 0 dBm
Input signal is 1900 MHz CW-tone switched on and off
RMS is loaded with 1kΩ, 4 pF, and VTGT = 2V,
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12 - 145
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
RMS Output Interface and Transient Response (Continued)
Transient response can also be slewed by the RMS output if it is excessively loaded: keep load resistance above
375Ω. An optimal load resistance of approximately 500Ω to 1kΩ will allow the output to move as quickly as it is able.
For increased load drive capability, consider a buffer amplifier on the RMS output.
Using an integrating amplifier on the RMS output allows for an alternative treatment for faster settling times. An external
amplifier optimized for transient settling can also provide additional RMS filtering, when operating HMC714LP5E with
a lower CINT capacitance value.
Rise/Fall Characteristics, CINT = 0 pF
4
3.5
RMSOUT (V)
3
2.5
3
2
1.5
2.5
2
1.5
1
1
0.5
0.5
0
0
0.5
1
1.5
2
2.5
10 dBm
0 dBm
-10 dBm
-20 dBm
-30 dBm
3.5
10 dBm
0 dBm
-10 dBm
-20 dBm
-30 dBm
RMSOUT (V)
12
POWER DETECTORS - SMT
Rise/Fall Characteristics, CINT = 10 nF
4
0
3
0
50
100
TIME (usec)
150
200
LOG-Slope and Intercept
The HMC714LP5E provides for an adjustment of output scale by controlling the fraction of RMSA /RMSB that is
fed-back to the setpoint interface at the VSETA /VSETB pins. Log-slope and intercept can be adjusted to “magnify” a
specific portion of the input sensing range, and to fully utilize the dynamic range of the RMS output.
A log-slope of 36.5 mV/dBm is set by connecting the RMSA /RMSB outputs directly to VSETA /VSETB pins using
0Ω resistors RFBK A and RFBKB. The log-slope is adjusted by using the appropriate resistors RFBK A , RFBKB,
RSHUNTA , RSHUNTB on the RMSA /RMSB and VSETA /VSETB pins. Log-intercept is adjusted by applying a DC
voltage to the VSETA /VSETB pins through resistors RSETA and RSETB .
Due to the 15 kΩ input resistance at the VSETA /VSETB pins, moderately low resistance values should be used to
minimize the scaling errors. Very low resistor values will reduce the load driving capabilities of RMSA /RMSB outputs
while larger values will result in scaling errors and increase of the temperature errors because of the mismatch of
the on-chip and external resistor temperature coefficients.
Optimized slope = ß * log slope
Optimized intercept = log intercept - (RFBK / RSET) * Vzc
RFBK
ß=
RFBK // RSHUNT // RSET
When RFBK = 0 Ohm to set RMS = VSET, then ß = 1
Note: Avoid excessive loading of the RMS output; keep
CLOAD < 35 pF, and RLOAD > 375Ω
12 - 146
250
TIME (usec)
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HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
LOG-Slope and Intercept (Continued)
Example: The logarithmic slope can be simply increased by choosing appropriate RFBK and RSHUNT values while
not populating the RSET resistor on the evaluation board to keep the intercept at nominal value. Setting RFBK =
820Ω and RSHUNT = 2200Ω results in an optimized slope of:
Optimized Slope = ß * log_slope = 1.42 * 36.5 mV / dB
Optimized Slope = 52 mV / dB
Slope Adjustment
12
4.5
4
3.5
RMSOUT (V)
3
2.5
2
Slope=51mV/dB
Rset=open
Rfbk=820ohm
Rshunt=2200ohm
1.5
1
Slope=36.2mV/dB
Rset=open
Rfbk=0ohm
Rshunt=open
0.5
0
-70
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
Example: The logarithmic intercept can also be adjusted by choosing appropriate RFBK, RSHUNT, and RSET values
while keeping the logarithmic slope at about 50mV/dB. Setting RFBK = 820 Ohm and RSHUNT = RSET = 4700Ω
results in an optimized slope of:
Optimized Slope = ß * log_slope = 1.4 * 36.5 mV / dB
Optimized Intercept = log_intercept - RFBK * VZC
RSET
Optimized Slope = 51 mV / dB
Optimized Intercept = log_intercept - 0.174 * VZC
Intercept Adjustment
Intercept Adjustment (with Temp)
4.5
4
3.5
4.5
Rset=4700ohm
Rfbk=820ohm
Rshunt=4700ohm
+25C
+85C
-40C
3.5
3
VOUT (V)
RMS (V)
VSET=-1.6V
4
3
2.5
2
Vzc=0
Vzc=0.8
Vzc=1.6
Vzc=3.2
Vzc=-0.8
Vzc=-1.6
Vzc=-3.2
1.5
1
0.5
0
-60
POWER DETECTORS - SMT
High Slope
Nominal
-50
-40
-30
-20
-10
INPUT POWER (dBm)
0
VSET=0V
2.5
VSET=1.6V
2
1.5
1
0.5
10
0
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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12 - 147
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
iPAR – Envelope Power Normalized To Average Power
The INSA and INSB are envelope detector outputs for A & B channels that provide a measurement of instantaneous
signal power normalized average power. This feature is called Instantaneous Peak to Average Ratio (iPAR). The iPAR
makes peak-to-average power comparisons immediately obvious. This simultaneous measurement of envelope power
and average power in HMC714LP5E has two fundamental advantages over traditional methods of which employ two
different power detectors working in parallel.
• Both the iPAR and RMS detectors share the same measurement structures, and
• Both the iPAR and RMS detectors share the same temperature compensation mechanisms.
12
With traditional implementation of peak-to-average power detection, the dominant source of errors is due to the
uncorrelated measurement deviations between the two separate detectors. Both detectors in the HMC714LP5E share
the same circuits (INSA-RMSA pair and INSB -RMSB pair), so any deviations, however small, are fully correlated.
1. A measurement of instantaneous signal power normalized to average power
In this most basic measurement mode, INSA (INSB) output is terminated to ground using an
external resistor which forms an output buffer with the internal transistor Q1 connected in
emitter-follower configuration. With Rext = 3.9 kOhm (R20 and R12 on the evaluation board
for A & B channels), INSA (INSB) output can track the input envelope up to a modulation
bandwidth of 35 MHz at which point the output swing drops by 50%. For an unmodulated input
signal with f>>35 MHz, the INSA (INSB) output will provide a constant value of approximately
1.6V indicating that the instantaneous power is equal to the average power.
The INSA (INSB) output voltages linearly follow the instantaneous power levels at the detector
input with the transfer gain scaled by an external voltage applied to VTGT (pin 28). For a
nominal voltage of 2V on VTGT the scaling factor of the INSA (INSB) output is 200 mV.
INS[A ,B] = IREF[A ,B] + SF*(EAR[A ,B] - 1)
where IREF[A ,B] = (VCC[A ,B]*REXT) /( 3*(REXT+65 Ohm)) ≈ 1.6 V (for VCC = 5V, REXT = 2 kΩ)
where EAR[A ,B] = input signal RF AM envelope-to-average power ratio on channel [A,B]
and SF = the scaling factor set by an external voltage applied to VTGT (200 mV when VTGT = 2.0V)
For example, the INSA (INSB) voltage will drop to 1.4 V (1.6-0.2V) when the input power instantaneously drops to zero,
and will increase to 2.2V (1.6+0.2*3) when the input power instantaneously increases to 4 times the average power.
With lower VTGT values the scaling factor also decreases, allowing INSA (INSB) to linearly track larger swings of input
power.
iPAR Output & Input RF Signal Envelope
vs. Time for an Input Crest Factor of
9.03 dB @ 1900 MHz [2]
2.25
INS [A,B] (V)
1
1.25
0.5
0.75
0
-0.5
Input RF Signal Envelope
1
2
3
Time (usec)
4
INPUT RF SIGNAL ENVELOPE (V)
1.75
0.25
12 - 148
3
1.5
IPAR Output
0
INS [A,B] Output vs. Instantaneous
Input Power (Normalized to Average
Power)
IPWR(t) = (VTGT/10)x(Pin(t)/Pavg)+(1.6-(Vtgt/10))
2.8
IPWR OUTPUT (V)
POWER DETECTORS - SMT
The iPAR feature can be configured to provide two major functions:
2.6
2.4
2.2
2
1.8
=Pin/Pav*0.2+(1.6-0.2)
IPWR Output VTGT = 2V
=Pin/Pav*0.1+(1.6-0.1)
IPWR Output VTGT = 1V
1.6
1.4
5
0
2
4
6
8
10
INSTANTANEOUS INPUT POWER
(NORMALIZED TO AVERAGE POWER)
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12
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
PAR – Envelope Power Normalized To Average Power (Continued)
The INSA (INSB) output is highly independent from input signal frequency, input average power, and temperature.
Proprietary design techniques assure very little part-to-part variation and maintain a very high degree of match
between channels.
2. A measurement of peak-power normalized to average power
To measure peak power, a peak-hold mechanism is required at the INSA (INSB) output. The
peak-hold circuit can be as simple as an RC combination on the INSA (INSB) pin. In this
configuration, peak excursions of the input signal is stored as a peak voltage on the external
Cext capacitor. Rext is used to set the quiescent bias point of Q1, and together with Cext
will for a time-constant for the peak-hold function. The larger Cext is the longer the peakdetector will “remember” the largest signal excursion; conversely a smaller value of Cext will
result in a shorter memory, and less filtering. The value of Rext for this “peak-power” mode
of the iPAR function should be much larger than the value used for the iPAR mode described
previously (instantaneous power tracking mode) to extend the RextCext time-constant.
INS[A ,B] = IREF[A ,B] + SF*(PAR[A ,B] - 1)
where IREF[A ,B] = VCC[A ,B] / 3 + 0.15V ≈ 1.82V (for VCC = 5V, REXT = 500 kΩ)
where PAR[A ,B] = input signal peak-to-average ratio on channel [A,B]
and SF = the scaling factor set by an external voltage applied to VTGT (150 mV when VTGT = 2.0V)
The graphs below describes the INSA (INSB) peak-hold levels as a function of input peak-to-average ratio (PAR) and
also crest factor. Note how the voltage applied at VTGT affects the INSA (INSB) reading. The voltage applied to the
VTGT pin also has a secondary effect on crest-factor performance. The VTGT signal optimizes internal bias points for
measurement accuracy at higher crest factors: refer to the section under “Adjusting VTGT for greater precision” for a
iPAR Feature Peak-to-Average Power
Detection Confi guration (REXT = 500Ω,
CEXT = 100 nF)
iPAR Feature Peak-to-Average Power
Detection Confi guration vc Crest Factor
(CEXT = 100 nF)
3.4
3.4
3.2
3.2
INSA
Linear Fit
3
2.8
2.8
INSA (V)
INSA (V)
VTGT=2V Rext=100kohm
VTGT=2V Rext=500kohm
VTGT=1V Rext=500kohm
3
POWER DETECTORS - SMT
12
2.6
VTGT=2V
2.4
2.2
256QAM (1Mbps)
Crest Factor~7.8dB
2.6
2.4
2.2
VTGT=1V
2
Single Tone
(CW) Inputs
2
1.8
1.8
Single Tone (CW) Inputs
1.6
1
2
3
4
5
6
7
8
9
10
PEAK TO AVERAGE POWER RATIO (PAR)
11
12
1.6
2
3
4
5
6
7
8
9 10 11
INPUT CREST FACTOR (dB)
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12
13
14
12 - 149
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
PAR – Envelope Power Normalized To Average Power (Continued)
full description on crest factor optimization.
iPAR Reference Outputs: IREFA & IREFB
HMC714LP5E also provides two reference voltage outputs, IREFA (pin 26) and IREFB (pin 15) for A & B channels,
which when used with the INSA /INSB outputs allows cancellation of temperature and supply related variations of the
INSA /INSB DC offsets. INSA /INSB DC offsets are equal to the IREFA /IREFB reference voltages, and these levels
corresponds to the envelope-to-average ratio (EAR) or peak-to-average ratio (PAR) of an unmodulated carrier (CWtone crest factor = 3 dB). For the best cancellation of the effects of temperature and supply voltage on INSA /INSB DC
offsets, load both the INSA /INSB and IREFA /IREFB outputs with an equivalent RC network.
Propagation Delay of INSA & INSB
Propagation Delay with Wideband
Single Ended Input Itnerface
Input Signal Envelope (V)
The proper operation of the iPAR feature depends on
the proper settling of the RMS outputs because both
the iPAR feature and the RMS detection feature share
the same internal structures. After internal mechanisms
of the detector have settled, the RMS outputs (RMSA &
RMSB) provide a reading of input average power while
iPAR outputs (INSA & INSB) provides the instantaneous
(or peak) power value of the input signal. There is of
course some finite propagation delay from the instant of
input power change to the change of INSA (INSB). That
propagation delay is defined by the external capacitor,
Cext. The figure illustrates the propagation delay from a
900 MHz, 6-tone (multi-carrier) input signal at -10 dBm
average power to the INSA output of HMC714LP5E. As
illustrated, the propagation delay is 26 nsec with the
detector configured with the wideband, single-ended
input interface. The use of the differential input interface
with the balun increases the propagation delay to 37 nsec
under similar test conditions.
0.2
2.85
0.15
2.49
2.14
0.1
0.05
26nS
1.78
0
1.42
-0.05
1.07
-0.1
0.71
-0.15
0.36
0
-0.2
-150
INSA (V)
POWER DETECTORS - SMT
12
-100
-50
0
50
100
150
200
250
Vpd (Vdc)
Standby Mode
The ENX can be used to force the power detector into a low-power standby mode. In this mode, the entire power
detector is powered-down. As ENX is deactivated, power is restored to all of the circuits. There is no memory of
previous conditions. Coming-out of stand-by, CINT and COFS capacitors will require recharging, so if large capacitor
values have been chosen, the wake-up time will be lengthened.
DC Offset Compensation Loop
Internal DC offsets, which are input signal dependant, require continuous cancellation. Offset cancellation is a critical
function needed for maintenance of measurement accuracy and sensitivity. The DC offset cancellation loop performs
this function, and its response is largely defined by the capacitance off. Setting DC offset cancellation, loop bandwidth
strives to strike a balance between offset cancellation accuracy, and loop response time. A larger value of COFS results
in a more precise offset cancellation, but at the expense of a slower offset cancellation response. A smaller value of
COFS tilts the performance trade-off towards a faster offset cancellation response. The optimal loop bandwidth setting
will allow internal offsets to be cancelled at a minimally acceptable speed.
12 - 150
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HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
DC Offset Compensation Loop (Continued)
DC Offset Cancellation Loop Bandwith
≈
1
π(500)(COFS + 20 x 1012)
Hz
For example: loop bandwidth for DC cancellation with COFS = 1nF, bandwidth is ~62 kHz
Note: The measurement error produced by internal DC offsets cannot be measured repeatably at any single operating
point, in terms of input signal frequency and level. Measurement error must be calculated to a best fit line, over the
entire range of input signal (again, in terms of signal level and frequency).
There are two competing aspects of performance, for which VTGT can be used to set a preference. Depending on
which aspect of precision is more important to the application, the VTGT pin can be used to find a compromise between
two sources of RMS output error: internal DC offset cancellation error and deviation at high crest factors (>12dB).
• Increasing VTGT input voltage will reduce the effect of internal DC offsets, but deviation at high crest factors
will increase slightly. A 50% increase in VTGT should produce an 18% improvement in RMS precision due to a
reduction in internal DC offsets effects.
• Decreasing VTGT input voltage will reduce errors at high crest factors, but internal DC offsets will have more
of an effect on measurement accuracy.
If input signal crest factor is not expected to exceed 10dB, you can improve RMS precision by increasing VTGT voltage.
Keep in mind that changing VTGT also adjusts the log-intercept point, which shifts the “input dynamic range”. The best
set-point for VTGT will be the lowest voltage that still maintains the “input dynamic range” over the required range of
input power. This new VTGT set-point should optimize the amount of DC offset related errors.
If error performance at high crest factors requires optimization, set VTGT for the maximum tolerable error at the
highest expected crest factor. Increasing VTGT beyond that point will unnecessarily compromise internal DC offset
cancellation performance. After changing VTGT, re-verify that the “input dynamic range” still covers the required range
of input power.
VTGT should be referenced to VREF for best performance. It is recommended to use a temperature stable DC amplifier
between VTGT and VREF to create VTGT > VREF. The VREF pin is a temperature compensated voltage reference output,
only intended for use with VTGT.
VTGT infl uence on DC offset compensation
RMS Output Error vs. Crest Factor
0
RMSA/RMSB ERROR (dB)
12
POWER DETECTORS - SMT
Adjusting VTGT for Greater Precision
-0.5
-1
VGTG
Error due to
internal DC offsets
1.0 V
nominal + 0.2 dB
1.5 V
nominal + 0.1 dB
2.0 V
nominal
3.0 V
7.nominal + 0.06 dB
3.5 V
nominal + 0.1 dB
-1.5
-2
VTGT=0.5V
VTGT=1V
VTGT=2V
VTGT=3V
-2.5
-3
0
2
4
6
8
10
12
14
CREST FACTOR (dB)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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12 - 151
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
System Calibration
Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy
absolute accuracy requirements. When performing this calibration, choose at least two test points: near the top-end
and bottom-end of the measurement range. It is best to measure the calibration points in the regions (of frequency and
amplitude) where accuracy is most important. Derive the log-slope and log-intercept, and store them in non-volatile
memory. Calibrate iPAR scaling by measuring the peak-to-average ratio of a known signal.
For example if the following two calibration points were measured at 2.35 GHz:
POWER DETECTORS - SMT
12
12 - 152
With Vrms = 2.34V at Pin= -7dBm,
Now performing a power measurement:
and Vrms=1.84V at Pin= -16dBm
Vrms measures 2.13V
Slope Calibration Constant = SCC
[Measured Pin] = [Measured Vrms]*SCC + ICC
SCC = (-16+7)/(1.84-2.34) = 18 dB/V
[Measured Pin] = 2.13*18.0 – 49.12 = -10.78dBm
Intercept Calibration Constant = ICC
An error of only 0.22dB
ICC = Pin – SCC*Vrms = -7 – 18.0 * 2.34 = -49.12dBm
Factory system calibration measurements should be made using an input signal representative of the application. If
the power detector will operate over a wide range of frequencies, choose a central frequency for calibration.
Layout Considerations
• Mount RF input coupling capacitors close to the IN+ and IN- pins.
• Solder the heat slug on the package underside to a grounded island which can draw heat away from the die
with low thermal impedance. The grounded island should be at RF ground potential.
• Connect power detector ground to the RF ground plane, and mount the supply decoupling capacitors close
to the supply pins.
Defi nitions:
• Log-slope: slope of PIN –> VRMS transfer characteristic. In units of mV/dB
• Log-intercept: x-axis intercept of PIN –> VRMS transfer characteristic. In units of dBm.
• RMS Output Error: The difference between the measured PIN and actual PIN using a line of best fit.
[measured_PIN] = [measured_VRMS] / [best-fit-slope] + [best-fit-intercept], dBm
• Input Dynamic Range: the range of average input power for which there is a corresponding RMS output
voltage with “RMS Output Error” falling within a specific error tolerance.
• Crest Factor: Peak power to average power ratio for time-varying signals.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC714LP5 / 714LP5E
v05.0309
DUAL RMS POWER DETECTOR
0.1 - 3.9 GHz
Notes:
POWER DETECTORS - SMT
12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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