HMC998 v01.0811 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Typical Applications Features The HMC998 is ideal for: High P1dB Output Power: +31 dBm • Test Instrumentation High Psat Output Power: +33 dBm • Microwave Radio & VSAT High Gain: 12 dB • Military & Space High Output IP3: +41 dBm • Telecom Infrastructure Supply Voltage: Vdd = +10V to +15V @ 500 mA • Fiber Optics 50 Ohm Matched Input/Output Die Size: 2.99 x 1.84 x 0.1 mm Functional Diagram General Description The HMC998 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 12 dB of gain, +41 dBm output IP3 and +31 dBm of output power at 1 dB gain compression while requiring 500 mA from a +15V supply. This versatile PA exhibits a positive gain slope from 1 to 18 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC998 amplifier I/Os are internally matched to 50 Ohms facilitating integration into mutli-chipmodules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 mA* Parameter Min. Frequency Range Gain Max. Min. 0.1 - 2 9.5 Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Typ. 29 11.5 Typ. Max. Min. 2 - 18 10.5 12.5 10.5 Typ. Max. Units 18 - 22 GHz 12.5 dB ±0.1 ±0.7 ±0.6 dB 0.006 0.11 0.016 dB/ °C -20 -20 -15 dB -7 -20 -20 dB 30 dBm 31 29 31.5 27 Saturated Output Power (Psat) 33 33.5 33 dBm Output Third Order Intercept (IP3) 41 41 40 dBm Noise Figure 10 4 5 dB 500 500 500 mA Supply Current (Idd) (Vdd= 15V, Vgg1= -0.7V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd = 500mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Gain & Return Loss Gain vs. Temperature 20 16 S21 S11 S22 0 14 GAIN (dB) RESPONSE (dB) 10 -10 12 10 -20 +25C +85C -55C 8 -30 6 0 5 10 15 20 25 30 0 2 4 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 12 14 16 18 20 22 0 +25C +85C -55C -10 +25C +85C -55C -10 RESPONSE (dB) RETURN LOSS (dB) 10 Output Return Loss vs. Temperature 0 -20 -20 -30 -30 -40 -40 0 2 4 6 8 10 12 14 16 18 20 0 22 4 8 16 20 24 Noise Figure vs. Frequency Low Frequency Gain & Return Loss 10 20 9 10 NOISE FIGURE (dB) 8 0 S21 S11 S22 -10 -20 -30 +25C +85C -55C 7 6 5 4 3 2 -40 -50 0.0001 12 FREQUENCY (GHz) FREQUENCY (GHz) RESPONSE (dB) 8 FREQUENCY (GHz) Amplifiers - Linear & Power - Chip 18 1 0.001 0.01 0.1 FREQUENCY (GHz) 1 10 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz P1dB vs. Temperature Psat vs. Temperature 36 +25C +85C -55C 34 32 Psat (dBm) P1dB (dBm) 34 30 30 28 26 26 +25C +85C -55C 24 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 10 12 14 16 18 20 22 16 18 20 22 16 18 20 22 Psat vs. Vdd P1dB vs. Vdd 36 36 10V 12V 14V 15V 34 34 Psat (dBm) 32 30 32 30 28 28 26 26 24 10V 12V 14V 15V 24 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 10 12 14 Output IP3 vs. Vdd @ Pout = 18 dBm Tone 50 50 45 45 40 40 35 +25C +85C -55C 30 8 FREQUENCY (GHz) IP3 (dBm) IP3 (dBm) 8 FREQUENCY (GHz) Output IP3 vs. Temperature @ Pout = 18 dBm Tone 35 10V 12V 14V 15V 30 25 25 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 3 32 28 24 P1dB (dBm) Amplifiers - Linear & Power - Chip 36 16 18 20 22 0 2 4 6 8 10 12 14 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Output IP3 vs. Output Power @ 11 GHz Power Compression @ 4 GHz 45 IP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) 400 mA 450 mA 500 mA 40 35 30 Pout Gain PAE 30 25 20 15 10 5 0 25 10 12 14 16 18 20 0 22 5 Power Compression @ 10 GHz 20 25 20 25 35 Pout Gain PAE 30 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 15 Power Compression @ 20 GHz 35 25 20 15 10 5 0 Pout Gain PAE 30 25 20 15 10 5 0 0 5 10 15 20 25 0 5 INPUT POWER (dBm) 10 60 SECOND HARMONIC (dBc) 70 8 6 Max Pdis @ 85C 2 GHz 10 GHz 20 GHz 2 15 Second Harmonics vs. Temperature @ Pout = 18 dBm 12 4 10 INPUT POWER (dBm) Power Dissipation POWER DISSIPATION (W) 10 INPUT POWER (dBm) OUTPUT POWER (dBm) Amplifiers - Linear & Power - Chip 35 50 +25C +85C -55C 50 40 30 20 10 0 0 0 2 4 6 8 10 12 14 INPUT POWER (dBm) 16 18 20 22 0 4 8 12 16 20 24 FREQUENCY(GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Second Harmonics vs. Vdd @ Pout = 18 dBm Second Harmonics vs. Pout 70 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) +12V +14V +15V 50 40 30 20 10 0 50 40 30 +12 dBm +14 dBm +16 dBm +18 dBm +20 dBm +22 dBm 20 0 0 4 8 12 16 20 24 0 4 8 FREQUENCY(GHz) 12 16 20 24 FREQUENCY(GHz) Reverse Isolation vs Temperature 0 -10 +25C +85C -55C -20 -30 -40 -50 -60 -70 -80 0 4 8 12 16 20 24 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) 5 60 10 ISOLATION (dB) Amplifiers - Linear & Power - Chip 70 +17 Vdc Gate Bias Voltage (Vgg1) -3 to 0 Vdc Gate Bias Voltage (Vgg2) Vgg2 = (Vdd - 6.5V) to (Vdd-4.5V) RF Input Power (RFIN) +27 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 129 mW/°C above 85 °C) 8.4 W Thermal Resistance (channel to die bottom) 7.73 °C/W Output Power into VSWR >7:1 +32 dBm Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +12 500 +14 500 +15 500 Vgg1 adjust to achieve Idd = 500 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] For more information refer to the “Packaging Information” Document in the Product Support Section of our website . [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS 0.004” 3. TYPICAL BOND PAD IS 0.004” SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±0.002” For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip Outline Drawing 6 HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Amplifiers - Linear & Power - Chip Pad Descriptions 7 Pad Number Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +9.5V should be applied to Vgg2. 4, 7 ACG2, ACG4 Low frequency termination. Attach bypass capacitor per application circuit herein. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Application Circuit Amplifiers - Linear & Power - Chip Assembly Diagram NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 800mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Amplifiers - Linear & Power - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998 v01.0811 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Amplifiers - Linear & Power - Chip Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10