HMC999 v01.0112 Amplifiers - Linear & Power - Chip GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications Features The HMC999 is ideal for: High P1dB Output Power: 38 dBm • Test Instrumentation High Psat Output Power: 40 dBm • Military Communications High Output IP3: 47 dBm • Jammers and Decoys High Gain: 11 dB • Radar, EW & ECM Subsystems Supply Voltage: +28V, +40V or +48V @ 1100 mA • Space 50 Ohm Matched Input/Output Die Size: 3.66 x 1.91 x 0.1 mm Functional Diagram General Description The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz. The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply. The HMC999 amplifier provides 10 Watts of saturated power in a chip area only 7 mm2, equating to a power density of 1.5 W/mm2 over 3 decades of bandwidth. All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25°C [2], Vdd = +48 V, Vgg2 = +22 V, Idd = 1100 mA* [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 0.01 - 2 10.5 12.5 Typ. Max. Min. 2-6 9 11 8.5 Typ. Max. Units 6 - 10 GHz 10.5 dB Gain Flatness ±0.8 ±0.4 ±0.7 dB Gain Variation Over Temperature 0.017 0.02 0.025 dB/ °C 20 18 15 dB Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 13 36.5 38.5 15 36 38 34.5 14 dB 36.5 dBm 40.5 40 39.5 dBm Output Third Order Intercept (IP3) 48 47 45.5 dBm Supply Current (Idd) (Vdd = 48V, Vgg = 22V Typ.) 1100 1100 1100 mA * Adjust Vgg1 between -5 to 0 V to achieve Idd = 1100 mA typical. [1] S parameter and OIP3 data taken at Idd=1000mA [2] Probe station chuck temperature adjusted to bring backside of die to +25°C 1 Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz 20 16 10 14 S21 S11 S22 0 -10 -20 +25C +85C 12 10 8 -30 6 0 2 4 6 8 10 12 14 0 1 2 3 FREQUENCY (GHz) 0 0 -5 -5 +25C +85C -15 -20 -25 6 7 8 9 10 +25C +85C -10 -15 -20 -25 -30 -30 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 FREQUENCY (GHz) 5 6 7 8 9 10 Gain & Return Loss @ Vdd = 40V, Idd = 1000 mA 20 20 10 10 RESPONSE (dB) S21 S11 S22 0 -10 -20 -30 0.001 4 FREQUENCY (GHz) Low Frequency Gain & Return Loss @ Vdd = 48V, Idd = 1000 mA RESPONSE (dB) 5 Output Return Loss vs. Temperature @ Vdd = 48V, Idd = 1000 mA RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature @ Vdd =48V, Idd = 1000 mA -10 4 FREQUENCY (GHz) Amplifiers - Linear & Power - Chip Gain vs. Temperature @ Vdd = 48V, Idd = 1000 mA GAIN (dB) RESPONSE (dB) Gain & Return Loss @ Vdd = 48V, Idd = 1000 mA S21 S11 S22 0 -10 -20 -30 0.01 0.1 FREQUENCY (GHz) 1 10 0 2 4 6 8 10 12 14 FREQUENCY (GHz) Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz 16 10 14 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) Gain vs. Supply Current @ Vdd = 48V 20 -10 -20 10 500 mA 600 mA 700 mA 800 mA 900 mA 1000 mA 6 0 2 4 6 8 10 12 14 0 1 2 3 FREQUENCY (GHz) Gain vs. Supply Voltage @ Idd = 1000 mA 5 6 7 8 9 10 7 8 9 10 7 8 9 10 P1dB vs. Temperature 16 50 +48V +40V +28V +25C +85C 45 P1dB (dBm) 14 12 10 8 40 35 30 6 25 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Psat vs. Temperature 50 50 +28V +40V +48V +25C +85C 45 Psat (dBm) 45 P1dB (dBm) 4 FREQUENCY (GHz) P1dB vs. Supply Voltage 40 35 30 40 35 30 25 25 0 1 2 3 4 5 6 FREQUENCY (GHz) 3 12 8 -30 GAIN (dB) Amplifiers - Linear & Power - Chip Gain & Return Loss @ Vdd = 28V, Idd = 1000 mA 7 8 9 10 0 1 2 3 4 5 6 FREQUENCY (GHz) Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz 50 45 45 40 35 +28V +40V +48V 30 600 mA 700 mA 800 mA 900 mA 1000 mA 1100 mA 40 35 30 25 25 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 Psat vs. Supply Current 5 6 7 8 9 10 Output IP3 @ Pout = 26 dBm / Tone 50 60 55 45 25C IP3 (dBm) 50 40 35 600 mA 700 mA 800 mA 900 mA 1000 mA 1100 mA 30 45 40 35 25 30 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) FREQUENCY (GHz) Output IM3 @ Vdd = +48V 80 70 2 GHz 4 GHz 6 GHz 8 GHz 60 IM3 (dBc) Psat (dBm) 4 FREQUENCY (GHz) FREQUENCY (GHz) Amplifiers - Linear & Power - Chip P1dB vs. Supply Current 50 P1dB (dBm) Psat (dBm) Psat vs. Supply Voltage 50 40 30 20 10 10 12 14 16 18 20 22 24 26 28 30 32 34 Pout/Tone (dBm) Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Power Compression @ 4 GHz Reverse Isolation vs. Temperature 5 Pout(dBm), GAIN(dB), PAE(%) -10 -20 -30 -40 -50 -60 40 1600 Pout Gain 35 1400 PAE 30 1200 25 1000 800 20 Idd 15 -70 0 1 2 3 4 5 6 7 8 9 600 10 400 5 200 0 0 0 10 4 8 12 16 20 24 28 32 INPUT POWER (dBm) FREQUENCY (GHz) Power Dissipation 60 POWER DISSIPATION (W) REVERSE ISOLATION (dB) 1800 45 +25C +85C 4 GHz 8 GHz 56 52 48 44 40 0 4 8 12 16 20 24 28 32 INPUT POWER (dBm) Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) Amplifiers - Linear & Power - Chip 0 HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Second Harmonics vs. Idd @ Pout = +26 dBm, Vdd = 48V Second Harmonics vs. Vdd @ Pout = +26 dBm, Idd = 1100 mA 60 50 40 30 800mA 900mA 1000mA 1100mA 20 10 60 +48V +40V +28V 50 40 30 20 10 0 0 0 2 4 6 8 10 12 0 2 FREQUENCY(GHz) 70 60 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 8 10 12 Second Harmonics vs. Temperature Vdd = 48V & Vgg = 22V & Idd = 1100 mA Pout = 26 dBm 70 50 40 30 +14 dBm +18 dBm +22 dBm +26 dBm +30 dBm 10 6 FREQUENCY(GHz) Second Harmonics vs. Pout Vdd = 48V & Vgg = 22V & Idd = 1100 mA 20 4 +25C +85C 50 40 30 20 10 0 0 0 2 4 6 8 10 12 0 2 FREQUENCY(GHz) 4 6 8 10 12 FREQUENCY(GHz) Amplifiers - Linear & Power - Chip 70 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 70 Absolute Maximum Ratings Drain Bias Voltage (Vdd) 56V Gate Bias Voltage (Vgg1) -5 to 0V Gate Bias Voltage (Vgg2) 6V to (Vdd - 8V) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RF Input Power @ Fin < 0.2GHz (RFIN) 28 dBm RF Input Power @ Fin > 0.2GHz (RFIN) 36 dBm Channel Temperature 225 °C Continuous Pdiss (T= 85 °C) (derate 729 mW/°C above 85 °C) 102 W Thermal Resistance [1] 1.37 °C/W Output Power into VSWR > 7:1 40 dBm Storage Temperature -65 to 150 °C Operating Temperature -55 to 85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 28 1100 40 1100 48 1100 [1] Includes 0.5 mil thick thermally conductive epoxy layer. Epoxy thermal conductivity = 60 W/mC Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Amplifiers - Linear & Power - Chip Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 7 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Pad Descriptions Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. External blocking capacitor is required 2, 6 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nomiinal operation +22V should be applied to either pad 2 or pad 6. 3, 4 AGC1, AGC2 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current Idd). See application circuit herein. 7, 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. This voltage may be applied to either pad 7 or pad 8. Die Bottom GND Die bottom must be connected to RF/DC ground Interface Schematic Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip Pad Number 8 HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Amplifiers - Linear & Power - Chip Assembly Diagram Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing ~1800 mA 9 Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick copper tungsten heat spreader which is then attached to the thermally conductive ground plane (Figure 2). 0.102mm (0.004”) Thick GaN MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaN MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Copper Tungsten 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Amplifiers - Linear & Power - Chip Mounting & Bonding Techniques for Millimeterwave GaN MMICs Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). Products and Product Information are Subject to Change Without Notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10