AGILENT MSA-1023

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1023
Features
• High Output Power:
+27 dBm Typical P1dB at 1.0␣ GHz
• Low Distortion:
37 dBm Typical IP3 at 1.0␣ GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• Hermetic, Metal/Beryllia
Stripline Package
• Impedance Matched to 25 Ω
for Push-Pull Configurations
Description
The MSA-1023 is a high performance, medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a hermetic, BeO flange package
for good thermal characteristics.
This MMIC is designed for use in a
push-pull configuration in a 25␣ Ω
system. The MSA-1023 can also be
used as a single-ended amplifier in
a 50␣ Ω system with slightly
reduced performance. Typical
applications include narrow and
broadband RF amplifiers in
industrial and military systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Push-Pull Biasing Configuration
R bias
VCC > 20 V
RFC
C block
4
C block
MSA
1
IN
50 Ω
3
2
Vd = 15 V
4
1
50 Ω
OUT
3
MSA
C block
2
C block
RFC
VCC > 20 V
R bias
5965-9554E
6-446
230 mil BeO Flange
Package
MSA-1023 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum[1]
425 mA
7.0 W
+25 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 15°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 66.7 mW/°C for TC > 95°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 325 mA, ZO = 25 Ω
GP
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth[2]
VSWR
Input VSWR
Units
Min.
f = 1.0 GHz
dB
7.5
f = 0.1 to 2.0 GHz
dB
Typ.
Max.
8.5
9.5
± 0.6
GHz
2.5
f = 0.1 to 2.0 GHz
2.0:1
Output VSWR
f = 0.1 to 2.0 GHz
NF
25 Ω Noise Figure
f = 1.0 GHz
2.8:1
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
dB
V
mV/°C
7.0
25.0
27.0
37.0
250
13.5
15.0
–18.0
Notes:
1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of
current is on the following page.
2. Referenced from 10 MHz gain (G P).
6-447
16.5
MSA-1023 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 325 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.001
0.005
0.010
0.025
0.050
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
.40
.51
.52
.52
.52
.53
.53
.51
.48
.45
.42
.38
.35
.34
.36
.39
.51
.60
–121
–167
–174
–178
179
176
172
164
157
151
146
144
145
149
152
153
148
133
15.3
8.5
7.5
7.2
7.1
7.0
7.0
7.0
7.0
7.0
7.0
6.9
6.8
6.6
6.3
5.9
4.6
3.0
5.85
2.67
2.36
2.28
2.26
2.25
2.25
2.24
2.24
2.23
2.23
2.22
2.20
2.15
2.07
1.97
1.69
1.41
149
156
166
172
173
170
163
146
130
113
95
78
61
44
19
11
–24
–57
–17.9
–15.9
–15.8
–15.8
–15.8
–15.8
–15.8
–15.8
–16.0
–16.1
–16.2
–16.4
–16.7
–17.0
–17.3
–17.7
–18.3
–17.9
.128
.160
.162
.162
.161
.161
.161
.161
.159
.157
.155
.151
.146
.141
.136
.130
.121
.127
22
6
3
1
–1
–3
–5
–11
–16
–21
–26
–31
–36
–41
–45
–49
–52
–57
.42
.45
.45
.45
.45
.45
.46
.46
.45
.44
.44
.44
.45
.46
.49
.62
.52
.70
–99
–161
–171
–177
–179
179
174
170
165
161
157
155
154
153
150
148
140
128
0.69
1.05
1.16
1.20
1.21
1.21
1.21
1.22
1.23
1.24
1.24
1.24
1.24
1.22
1.18
1.13
.91
.59
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
400
0.5 GHz
8
Id (mA)
1.0 GHz
2.0 GHz
4
28
100
0
18
20
22
24
26
28
30
32
0
2
4
6
8
P1 dB
24
20
150
10
200
250
300
Vd (V)
POWER OUT (dBm)
32
10
30
8
350
400
I d (mA)
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Gain vs. Power Out,
ZO = 25°Ω, Id = 325 mA.
Figure 3. Output Power at 1 dB
Gain Compression, Third Order
Intercept Point vs. Current,
ZO=25Ω, f = 1.0 GHz.
6
ZO = 25 Ω
5
28
4
26
1.0 GHz
ZO = 50 Ω
6
VSWR
0.5 GHz
GAIN (dB)
P1 dB (dBm)
IP3
200
1.5 GHz
2
4
24
Input ZO = 50 Ω
3
2
1.0 GHz,
4.0 GHz
22
2.0 GHz
20
–50
36
32
6
0
16
TC = –50°C
P1 dB (dBm)
GAIN (dB)
300
40
TC = +100°C
TC = +25°C
IP3 (dBm)
10
+25
+100
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression vs. Temperature,
ZO = 25 Ω, Id = 325 mA.
2
Id = 400 mA
Id = 325 mA
Id = 150 mA
0
0.1
0.2 0.3
1
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 5. Gain vs. Frequency,
Id = 325 mA.
6-448
4.0
Output ZO = 50 Ω
Input ZO = 25 Ω
Output ZO = 25 Ω
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
FREQUENCY (GHz)
Figure 6. VSWR vs. Frequency,
Id = 325 mA.
230 mil BeO Flange Package
.725 ± .030
18.42 ± .76
4
GROUND
.800 RF
20.32 INPUT
RF OUTPUT
AND BIAS
.562
14.27
3
1
.120
3.05
.130
3.30
GROUND
2
.130 ± .010
3.30 ± .25
.004 ± .002
.10 ± .05
.050
1.27
.230
5.84
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.060
1.52
6-449