2SC3930 TRANSISTOR (NPN) SOT-323 FEATURES z For high-frequency Amplification Complementary to 2SA1532 z Optimum for RF amplification of FM/AM radios z High transition frequency fT 1.BASE 2.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3.COLLECTOR Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 30 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=0 MIN TYP MAX UNIT 30 V IC= 100μA, IB=0 20 V IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=10V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE Transition frequency fT Common emitter reverse transfer capacitance VCE=10V,IC=1mA VCE=10V,IE=1mA, f=200MHZ Cre 70 220 150 MHz VCB=10V,IC=1mA, f=10.7MHZ 1.5 pF Noise figure NF VCB=10V,IC=1mA, f=5MHz 4 dB Reverse transfer impedance Zrb VCB=10V,IC=1mA, f=2MHz 50 Ω CLASSIFICATION OF hFE(1) Marking Range VB VC 70-140 110-220 １ JinYu semiconductor www.htsemi.com 2SC3930 ２ JinYu semiconductor www.htsemi.com 2SC3930 ３ JinYu semiconductor www.htsemi.com