2SC5343 TRANSISTOR (NPN) SOT-23 FEATURES Excellent hFE Linearity z z Low Noise. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA Ib Base Current -Continuous 50 mA PC Collector Power dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE(1) VCE=6V,IC=2mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Collector output capacitance Cob Noise figure NF CLASSIFICATION OF Rank Range IC=100mA,IB=10mA JinYu 700 0.1 VCE=10V,IC=1mA 0.25 80 VCB=10V,IE=0,f=1MHz VCE=6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ 3.5 pF 10 dB O Y G L 70-140 120-240 200-400 300-700 www.htsemi.com V MHz hFE １ semiconductor 70 2SC5343 ２ JinYu semiconductor www.htsemi.com