2SA1 201 SOT-89 TRANSISTOR(PNP) 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V -5 V VEBO Emitter-Base Voltage IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-5V,IC=-100mA Collector-emitter saturation voltage VCE(sat) -1 V -1 V VBE VCE=-5V,IC=-500mA Transition frequency fT VCE=-5V,IC=-100mA CLASSIFICATION OF Rank Range Marking Cob 240 IC=-500mA,IB=-50mA Base-emitter voltage Collector output capacitance 80 120 VCB=-10V,IE=0,f=1MHz MHz 30 hFE O Y 80-160 120-240 DO DY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF 2SA1 201 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５