2SC2412 TRANSISTOR (NPN) SOT-23 FEATURES · Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Marking VCE(sat) Cob JinYu 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=-2mA,f=100MHz 160 VCB=12V,IE=0,f=1MHz 2.0 3.5 Q R S 120 - 270 180 - 390 270 - 560 BQ BR BS www.htsemi.com V MHz hFE １ semiconductor 120 pF 2SC2412 ２ JinYu semiconductor www.htsemi.com 2SC2412 ３ JinYu semiconductor www.htsemi.com