2SB7 09A TRANSISTOR(PNP) SOT-23 FEATURES For general amplification z Complementary to 2SD601A 1. BASE 2. EMITTER 3. COLLECTOR z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10 μA, IE=0 -45 V Collector-emitter breakdown voltage V(BR)CEO IC= -2mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE= -10 μA, IC=0 -7 V Collector cut-off current ICBO VCB= -20 V, IE=0 -0.1 μA Collector cut-off current ICEO VCE= -10V, IB=0 -100 μA DC current gain hFE VCE= -10V,IC= -2mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking JinYu 460 IC=-100 mA, IB= -10mA VCE= -10V, IC= -1mA f=200MHz -0.5 60 VCB= -10V, IE= 0 2.7 f=1MHz Q R S 160-260 210-340 290-460 BQ1 BR1 BS1 www.htsemi.com V MHz HFE １ semiconductor 160 pF 2SB7 09A ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB7 09A ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５