2SA8 1 2 SOT-23 TRANSISTOR(PNP) Unit : mm 1. BASE FEATURES Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V z 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=- 60 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=- 6V, IC= -1mA Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance 90 600 IC=-100mA, IB= -10mA IC=-1mA, VCE=-6V VCE=-6V, -0.58 IC= -10mA VCB=-10V,IE=0,f=1MHz -0.3 V -0.68 V 180 MHz 4.5 pF CLASSIFICATION OF hFE Rank Range Marking M4 M5 M6 M7 90-180 135-270 200-400 300-600 M4 M5 M6 M7 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA8 1 2 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５