2 SC4180 TRANSISTOR (NPN) FEATURES SOT–323 High DC Current Gain APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 120 V 2. EMITTER VCEO Collector-Emitter Voltage 120 V 3. COLLECTOR VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 50 nA DC current gain Collector-emitter saturation voltage hFE(1)* VCE=6V, IC=1mA 135 hFE(2) VCE=6V, IC=0.1mA 100 VCE(sat) IC=10mA, IB=1mA Base-emitter voltage VBE VCE=6V, IC=1mA 0.55 Transition frequency fT VCE=6V, IC=1mA 50 Cob Collector output capacitance VCB=30V, IE=0, f=1MHz 900 0.3 V 0.65 V MHz 2.5 *Pulse test: pulse width ≤350μs, duty Cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK D15 D16 D17 D18 RANGE 135–270 200–400 300–600 450–900 MARKING D15 D16 D17 D18 １ JinYu semiconductor www.htsemi.com pF