2SA1 58 6 TRANSISTOR(PNP) FEATURES SOT–323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3. COLLECTOR Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA PC Collector Power Dissipation 100 mW Thermal Resistance From Junction To Ambient 1250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA DC current gain hFE VCE=-6V, IC=-2mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 70 400 IC=-100mA, IB=-10mA VCE=-10V,Ic=-1mA -0.3 80 MHz VCB=-10V, IE=0, f=1MHz 7 CLASSIFICATION OF hFE RANK O Y GR(G) RANGE 70–140 120–240 200–400 MARKING SO SY SG １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ pF