MMBTA28 TRANSISTOR(NPN) FEATURES SOT–23 High Current Gain MARKING: 3SS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 12 V IC Collector Current 500 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ 1. BASE 2. EMITTER RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO Test conditions Min Typ Max Unit IC=100µA, IE=0 80 V IC=100µA, VBE=0 80 V 12 V Collector-emitter sustain voltage VCEO(sus) Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICES VCE=60V, VBE=0 0.5 µA Emitter cut-off current IEBO VEB=10V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage hFE(1) * VCE=5V, IC=10mA 10 K hFE(2) * VCE=5V, IC=100mA 10 K VCE(sat)1* IC=10mA, IB=0.01mA 1.2 V VCE(sat)2* IC=100mA, IB=0.1mA 1.5 V Base-emitter voltage VBE* VCE=5V, IC=100mA 2 V Collector output capacitance Cob VCB=1V, IE=0, f=1MHz 8 pF fT Transition frequency VCE=5V,IC=10mA, f=100MHz 125 MHz *Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５