2SD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1260 z Low Collector-Emitter Saturation Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50µA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=50µA,IC=0 5 V Collector cut-off current ICBO VCB=80V,IE=0 1 µA Emitter cut-off current IEBO VEB=4V,IC=0 1 µA DC current gain hFE VCE=3V, IC=500mA VCE(sat) IC=500mA,IB=20mA Collector-emitter saturation voltage Transition frequency Collector output capacitance fT Cob 82 390 0.4 VCE=10V,IC=50mA, f=100MHz 100 MHz VCB=10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE RANK P Q R RANGE 82–180 120–270 180–390 MARKING DF １ JinYu semiconductor V www.htsemi.com