HTSEMI MMBT4403

MMBT4403
TRANSISTOR (PNP)
FEATURES
Switching transistor
SOT-23
MARKING :MMBT4403=2T
1. BASE
2. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.6
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA , IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-35V, IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-35 V, IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-2V, IC= -150mA
100
300
Collector-emitter saturation voltage
VCE(sat)
IC=-150mA, IB=-15mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=- 150mA, IB=-15mA
-0.95
V
Transition frequency
fT
VCE= -10V, IC= -20mA
f = 100MHz
200
MHz
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
MMBT4403
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05
MMBT4403
3 JinYu
semiconductor
www.htsemi.com
Date:2011/05