MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor SOT-23 MARKING ：MMBT4403=2T 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V Transition frequency fT VCE= -10V, IC= -20mA f = 100MHz 200 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT4403 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT4403 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５