ETC S9015

S901 5
TRANSISTOR(PNP)
SOT-23
FEATURES
Complementary to S9014
1. BASE
z
2. EMITTER
3. COLLECTOR
MARKING: M6
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.1
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = -0.1mA, IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50 V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
DC current gain
hFE
VCE=-5V, IC= -1mA
200
1000
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -10mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-100mA, IB=-10mA
-1
V
fT
Transition frequency
CLASSIFICATION OF
Rank
Range
VCE=-5V,
f=30MHz
IC= -10mA
150
MHz
hFE
L
H
200-450
450-1000
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
S901 5
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05