S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES Complementary to S9015 z 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= 100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=0 MIN TYP MAX UNIT 50 V IC= 0.1mA, IB=0 45 V IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V fT VCE=5V, IC= 10mA f=30MHz Transition frequency CLASSIFICATION OF Rank Range 150 MHz hFE L H 200-450 450-1000 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ S901 4 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５