MMSTA42 TRANSISTOR(NPN) SOT-323 FEATURES 1. BASE z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMSTA92(PNP) 2. EMITTER 3. COLLECTOR MARKING:K3M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.3 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=200V,IE=0 0.25 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE(1) VCE=10V,IC=1mA 60 hFE(2) VCE=10V,IC=10mA 100 hFE(3) VCE=10V,IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V DC current gain Transition frequency fT VCE=20V,IC=10mA,f=30MHz 200 50 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMST5551 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMST5551 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５