MMBTA05 TRANSISTOR(NPN) SOT-23 FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 4 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE=60V, IB=0 0.1 μA Collector cut-off current IEBO VEB=3V, IC=0 0.1 μA hFE1 VCE=1V, IC= 10mA 100 hFE2 VCE=1V, IC= 100mA 100 VCE(sat) IC=100mA, IB=10mA 0.25 V VBE VCE=1V, IC= 100mA 1.2 V 400 DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency fT VCE= 2V, IC=10mA f=100MHz 100 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA05 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５