HTSEMI MMBTA05

MMBTA05
TRANSISTOR(NPN)
SOT-23
FEATURES
Driver transistor
1. BASE
2. EMITTER
3. COLLECTOR
MARKING :1H
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA, IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
4
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=60V, IB=0
0.1
μA
Collector cut-off current
IEBO
VEB=3V, IC=0
0.1
μA
hFE1
VCE=1V, IC= 10mA
100
hFE2
VCE=1V, IC= 100mA
100
VCE(sat)
IC=100mA, IB=10mA
0.25
V
VBE
VCE=1V, IC= 100mA
1.2
V
400
DC current gain
Collector-emitter saturation voltage
Base-emitter
voltage
Transition frequency
fT
VCE= 2V, IC=10mA
f=100MHz
100
MHz
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
MMBTA05
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05