S901 3 TRANSISTOR(NPN) SOT-23 FEATURES z Complementary to S9012 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCE=20V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 50mA 120 hFE(2) VCE=1V, IC=500mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V fT Transition frequency CLASSIFICATION OF Rank Range VCE=6V, f=30MHz hFE(1) L 120-200 IC= 20mA 150 MHz H J 200-350 300-400 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ S901 3 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ A,Apr,2011