SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. : 200 V : 0.18 ohm : 18A : 40 nc : 139 W D G S Absolute Maximum Ratings Symbol VDSS Parameter Drain to Source Voltage Continuous Drain Current (@Tc=25 ID IDM ) Continuous Drain Current (@Tc=100 ) Drain Current Pulsed (Note 1) Value Units 200 V 18 A 11.4 A 72 A VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns 139 W dv/dt Total Power Dissipation (@Tc=25 PD TSTG,TJ TL 30 ) Derating Factor above 25 V 1.10 Operating junction temperature &Storage temperature W/ -55~+150 Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 Thermal Characteristics Value Symbol Parameter Units Min Typ Max R JC Thermal Resistance, Junction-to-Case - - 0.9 /W R CS Thermal Resistance, Case-to-Sink - - 0.5 /W R JA Thermal Resistance, Junction-to-Ambient - - 62.5 /W 1/6 REV0.2 05.6.9 SAMWIN Electrical Characteristics SW640 (Tc=25 unless otherwise noted) Value Symbol Parameter Test Conditions Units Min Typ Max 200 - - - 0.2 - - - 1 uA Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA BVDSS/ Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25 V V/ VDS=200V, VGS=0V IDSS IGSS Drain-Source Leakage Current VDS=160V, Tc=125 Gate-Source Leakage Current VGS=30V,VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=3.25A - 0.15 0.18 ohm - 1350 1750 - 180 240 - 45 60 - 25 50 - 80 230 - 150 300 - 70 200 - 40 55 - 6 - - 21 - Min. Typ. Max. Integral Reverse p-n Junction Diode in the MOSFET - - 18 - - 72 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time VDD=200V,ID=6.5A RG=50ohm (Note4,5) Fall Time Total Gate Charge Gate-Source Charge VDS=320V,VGS=10V, ID=6.5A (Note4,5) Gate-Drain Charge (Miller Charge) n s nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Unit. IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage IS=6.5A,VGS=0V - - 1.5 V trr Reverse Recovery Time - 195 - ns Qrr Reverse Recovery Charge IS=6.5A,VGS=0V, dIF/dt=100A/us - 1.47 - uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=18.6mH,IAS=18A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD 18A,di/dt 100A/us,VDD BVDSS, Starting TJ=25 4. Pulse Test: Pulse Width 300us,Duty Cycle 2% 5. Essentially independent of operating temperature. REV0.2 A 2/6 05.6.9 SW640 VGS top:10V 9V 8V 7V 6V 5.5V 5V bottom:5.0V 10 o 25 C ID,Drain Current [A] ID,Drain Current [A] SAMWIN 1 10 o 150 C 1 ∗ Note: ∗ Note: 1.250us pulse test 1.VDS=50V 2.250us pulse test. 2.TC=25oC 0.1 0.1 0.1 1 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS,Drain-to-Source voltage [V] Fig 1. On-State Characteristics Fig 2. Transfer Characteristics IDR,Reverse Drain Current[A] RDS(ON) Drain-Source On-Resistance[ohm] 1.0 0.8 VGS=20V 0.6 VGS=10V 0.4 10 o 150 C 1 ∗ Note: 0.2 1.vGS=0v o ∗ Note:TJ=25 C 2.250us test 0.1 0.2 0.0 0 10 20 30 40 50 60 0.4 0.6 Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 1.0 1.2 1.4 1.6 1.8 2.0 Fig 4. On State Current vs. Allowable Case Temperature 4000 12 3750 Ciss = Cgs+Cgd(Cds=shorted) 3500 Coss= Cds+Cgd 3250 VDS=160V 10 Crss = Cgd VDS=100V VGS,Gate-Source Voltage [V] 3000 2750 2500 Ciss 2250 2000 Coss 1750 1500 Crss 1250 1000 750 ∗ Note: 500 1.VGS=0V 250 0.8 VSD,Source-Drain Voltage[V] ID, Drain Current[A] Capacitance [pF] o 25 C 2.f=1MHz. 0 0.1 VDS=40V 8 6 4 2 Note:ID=18A 0 1 0 10 10 20 30 40 50 QG,Total Gate Charge [nC] VDS,Drain-Source Voltage [V] Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics (Non-Repetitve) 3/6 REV0.2 05.6.9 SAMWIN SW640 3.0 2.5 RDs(on)(Normalized) 1.1 1.0 0.9 ∗ Note: 1.VGS=0V Drain-Source On-Resistance BVDSS[Normalized] Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ∗Note: 0.5 1.VGS=10V 2.ID=250uA 0.8 -100 -50 0 50 100 150 2.ID=9A 0.0 -100 200 -50 0 50 100 150 200 o TJ,Junction Temperature[ C] o TJ,Junction Temperatur [ C] Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature 20 Operation In This Area Limted By RDS(ON) 2 16 10us 100us 1 10 ID, Drain Current[A] ID, Drain Current[A] 10 1ms 10ms 0 10 ∗Note: 1.Tc=25°C 2.Tj=150°C 3.Single Pulse -1 10 0 1 10 8 4 0 25 2 10 12 10 50 75 VD,Drain-Source Voltage[V] 100 125 150 o Tc,Case Temperature [ C] Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature 1 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 θJC Z (t),Thermal Response D = 0 .5 ∗ N o te : 1 .Z s in g le p u ls e 0 .0 1 1 E -5 1 E -4 o Θ JC (t)= 0 .9 C /w M a x 2 .D u ty F a c to r ,D = t1 /t2 3 .T j- T c = P D M * Z Θ J C ( t) 1 E -3 0 .0 1 0 .1 1 10 t1 ,S q u a r e W a v e P u ls e D u r a tio n ( s e c ) Fig 11. Transient Thermal Response Curve 4/6 REV0.2 05.6.9 SAMWIN SW640 VGS Same Type as DUT 50K Qg 10V 200nF 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDS VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.2 05.6.9 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com