SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge. : 500 V : 0.85 ohm : 8.5 A : 36 nc : 125 W D G S Absolute Maximum Ratings Symbol VDSS ID IDM Parameter Value Units Drain to Source Voltage 500 V Continuous Drain Current (@Tc=25 ) 8.5 A 6.2 A 34 A Continuous Drain Current (@Tc=100 ) Drain Current Pulsed (Note 1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Total Power Dissipation (@Tc=25 ) 125 W Derating Factor above 25 1.18 dv/dt PD TSTG,TJ TL 30 Operating junction temperature &Storage temperature V W/ -55~+150 Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 Thermal Characteristics Value Symbol Parameter Units Min Typ Max R JC Thermal Resistance, Junction-to-Case - - 1.0 /W R CS Thermal Resistance, Case-to-Sink - 0.5 - /W R JA Thermal Resistance, Junction-to-Ambient - - 62.5 /W 1/6 REV0.1 04.10.15 SAMWIN Electrical Characteristics SW840 (Tc=25 unless otherwise noted) Value Symbol Parameter Units Test Conditions Min Typ Max 500 - - - 0.55 - - - 1 uA Off Characteristics BVDSS Drain- Source Breakdown Voltage V GS=0V,ID=250uA BVDSS/ Tj Breakdown Voltage Temperature coefficient ID=250uA, referenced to 25 IDSS Drain-Source Leakage Current VDS=500V, VGS=0V V V/ VDS=400V, Tc=125 Gate-Source Leakage Current VGS=30V, VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA IGSS On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=4.0A - 0.7 0.85 ohm - - 1450 - - 210 - - 30 - - 60 - - 80 - - 320 - - 100 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Dynamic Characteristics td(on) tr td(off) Turn-on Delay Time VDD=250V,ID=8.5A RG=50ohm Rise Time ns Turn-off Delay Time (Note4,5) tf Qg Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Miller Charge) - - 36 VDS=400V,VGS=10V, ID=8.5A - 7 - (Note4,5) - 12.5 - Min. Typ. Max. Integral Reverse p-n Junction Diode in the MOSFET - - 8.5 - - 34 nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Unit. IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage IS=1.0A,VGS=0V - - 1.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge IS=1.0A,VGS=0V, dIF/dt=100A/us - 2.2 - uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=10mH,IAS=8.5A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD 1.8A,di/dt 100A/us,VDD BVDSS, Starting TJ=25 4. Pulse Test: Pulse Width 300us,Duty Cycle 2% 5. Essentially independent of operating temperature. REV0.1 A 2/6 04.10.15 SAMWIN SW840 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics (Non-Repetitive) Fig 6. Gate Charge Characteristics 3/6 REV0.1 04.10.15 SAMWIN SW840 Fig 8. On-Resistance Variation vs. Junction Temperature Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature Fig 11. Transient Thermal Response Curve 4/6 REV0.1 04.10.15 SAMWIN SW840 VGS Same Type as DUT 50K Qg 10V 200nF 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDS VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.1 04.10.15 SAMWIN SW840 + DUT VDS __ L Driver VDD RG Same Type as DUT VGS Is controlled by pulse period VGS (Driver) Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.1 04.10.15