PRELIMINARY
SFH054
SemiWell Semiconductor
N-Channel MOSFET
Features
Symbol
■
Low RDS(on) (0.014Ω )@VGS=10V
■
Low Gate Charge (Typical 70nC)
Low Crss (Typical 160pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)
■
■
■
■
{
2. Drain
●
◀
1. Gate
{
▲
●
●
{
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
3. Source
TO-247
1
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Value
Units
Drain to Source Voltage
Parameter
60
V
Continuous Drain Current(@TC = 25°C)
70*
A
Continuous Drain Current(@TC = 100°C)
64
A
360
A
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
PD
TSTG, TJ
TL
(Note 1)
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
±25
V
800
mJ
7.0
V/ns
230
W
1.5
W/°C
- 55 ~ 175
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
0.65
°C/W
RθCS
Thermal Resistance, Case to Sink
-
0.24
-
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
40
°C/W
1/7
March, 2004. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFH054
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
60
-
-
V
-
0.056
-
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 1mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
IGSS
VDS = 60V, VGS = 0V
-
-
1
uA
VDS = 48V, TC = 150 °C
-
-
10
uA
Gate-Source Leakage, Forward
VGS = 25V, VDS = 0V
100
nA
Gate-Source Leakage, Reverse
VGS = -25V, VDS = 0V
-
-
-100
nA
2.0
-
4.0
V
-
-
0.014
Ω
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON)
Static Drain-Source On-state Resistance
VGS =10 V, ID = 35A
Dynamic Characteristics
Ciss
Input Capacitance
-
2350
3050
Coss
Output Capacitance
-
690
890
Crss
Reverse Transfer Capacitance
-
160
200
-
30
70
-
60
130
-
125
260
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
VDD =30V, ID =35A, RG =50Ω
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge(Miller Charge)
※ see fig. 13.
(Note 4, 5)
-
95
200
-
70
90
VDS =48V, VGS =10V, ID =70A
-
18
-
※ see fig. 12.
-
24
-
Min.
Typ.
Max.
-
-
70
-
-
360
(Note 4, 5)
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
Test Conditions
VSD
Diode Forward Voltage
IS =70A, VGS =0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=70A,VGS=0V,dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 250 uH, IAS = 70A, VDD = 25V, RG = 0Ω , Starting TJ = 25°C
3. ISD ≤ 70A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
* Current limited by package,(Die Current=90A)
2/7
Unit.
A
-
-
1.5
V
-
62
-
ns
-
110
-
nC
SFH054
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
2
10
ID, Drain Current [A]
ID, Drain Current [A]
2
1
10
o
175 C
1
10
o
25 C
o
-55 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 25V
2. 250µ s Pulse Test
0
0
10
-1
10
0
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
25
IDR, Reverse Drain Current [A]
RDS(ON),
Drain-Source On-Resistance [mΩ ]
30
20
VGS = 20V
VGS = 10V
15
10
5
2
10
1
10
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0
0
0
50
100
150
200
250
300
10
0.2
0.4
ID, Drain Current [A]
1.0
1.2
1.4
1.6
1.8
Fig 6. Gate Charge Characteristics
5500
12
4500
VGS, Gate-Source Voltage [V]
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
5000
4000
Capacitance [pF]
0.8
VSD, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
※ Notes :
1. VGS = 0V
2. f=1MHz
3500
3000
Ciss
2500
2000
Coss
1500
1000
500
0
0.6
VDS = 30V
10
VDS = 48V
8
6
4
2
※ Note : ID = 70.0 A
Crss
0
5
10
15
20
25
VDS, Drain-Source Voltage [V]
30
35
0
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
3/7
SFH054
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 35 A
0.5
0.0
-100
200
-50
50
100
150
200
150
175
TJ, Junction Temperature [ C]
Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 9. Maximum Safe Operating Area
3
10
0
o
o
TJ, Junction Temperature [ C]
100
Operation in This Area
is Limited by R DS(on)
limited by Package
100 µs
2
10
ID' Drain Current [A]
ID, Drain Current [A]
80
1 ms
10 ms
1
10
※ Notes :
o
1. TC = 25 C
60
40
20
o
2. TJ = 175 C
3. Single Pulse
0
10
-1
10
0
1
10
0
25
2
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
o
TC' Case Temperature [ C]
Fig 11. Transient Thermal Response Curve
10
0
Zθ JC(t), Thermal Response
D = 0 .5
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
10
-2
s in g le p u ls e
10
※ N o te s :
1 . Z θ J C( t) = 0 .6 5 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
4/7
10
0
10
1
SFH054
Fig. 12. Gate Charge Test Circuit & Waveforms
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 13. Switching Time Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
( 0.5 rated V DS )
10V
V
Pulse
Generator
Vin
DUT
RG
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
VDD
ID
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
5/7
SFH054
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
6/7
VDD
SFH054
TO-247 Package Dimension
mm
Dim.
Min.
Inch
Max.
Min.
A
15.77
Typ.
16.03
0.621
0.631
B
20.80
21.10
0.819
0.831
C
20.05
20.31
0.789
0.800
D
4.48
4.58
0.176
0.180
E
4.27
4.37
0.168
0.172
F
5.32
5.58
0.209
0.220
G
4.90
5.16
0.193
0.203
H
1.90
2.06
0.075
0.081
I
2.35
2.45
0.093
0.096
J
Typ.
0.6
Max.
0.024
K
1.2
1.33
0.047
0.052
L
1.07
1.33
0.042
0.052
M
2.99
3.25
0.118
0.128
φ
3.56
3.66
0.140
0.144
G
A
H
B
D
φ
I
C
E
L
1
2
M
3
F
7/7
J
K
1. Gate
2. Drain
3. Source