FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for micro-wave, Induction heating (I-H) Jar, induction heater, home appliance. High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode RoHS Compliant Applications Micro-Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance. C G TO-3P G C E E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage @ TC = 25oC Collector Current IC @ TC = Collector Current ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD 100oC @ TC = 100oC Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation o @ TC = 100 C Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Units 1000 V ± 25 V 50 A 35 A 200 A 15 A 150 A 156 W 63 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.8 o RθJC(DIODE) Thermal Resistance, Junction to Case - 1.2 oC/W RθJA Thermal Resistance, Junction to Ambient - 40.0 ©2009 Fairchild Semiconductor Corporation FGA50N100BNTD2 Rev. A 1 o C/W C/W www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK February 2009 Device Marking Device Package Packaging Type FGA50N100BNTD2 FGA50N100BNTD2 TO-3PN Rail / Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 - - V ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V - - 1.0 mA IGES G-E Leakage Current VGE = ±25V, VCE = 0V - - ±500 nA IC = 60mA, VCE = VGE 4.0 5.5 7.0 V - 1.5 1.8 V 2.5 2.9 V - V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 10A, VGE = 15V IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC - 3.1 - 6000 - pF VCE = 10V, VGE = 0V, f = 1MHz - 260 - pF - 200 - pF - 34 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 600V, IC = 60A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC - 68 - ns - 243 - ns - 65 100 ns - 257 350 nC - 45 - nC - 95 - nC IF = 15A - 2.9 3.2 V IF = 60A - 4.0 4.7 V VCE = 600V, IC = 60A, VGE = 15V, TC = 25oC Electrical Characteristics of the Diode TC = 25°C unless otherwise noted VFM Diode Forward Voltage trr Diode Reverse Recovery Time IF = 60A, di/dt = 100A/us - 60 75 ns IR Instantaneous Reverse Current VRRM = 1000V - - 2 µA FGA50N100BNTD2 Rev. A 2 www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Package Marking and Ordering Information Figure 1. Typical Output Characteristics 200 200 o TC = 25 C o 20V 15V TC = 125 C 20V 10V 15V 10V 160 Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 9V 120 80 8V 40 160 9V 120 8V 80 7V 40 7V VGE = 6V VGE = 6V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 0 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VCE = 20V Common Emitter VGE = 15V o 160 Collector Current, IC [A] Collector Current, IC [A] 10 Figure 4. Transfer Characteristics 200 TC = 25 C o TC = 125 C 120 80 o 160 TC = 25 C o TC = 125 C 120 80 40 40 0 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 2 7 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 4.5 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 2 4 6 8 Collector-Emitter Voltage, VCE [V] 90A 60A 3.0 30A IC = 10A 1.5 Common Emitter o TC = -40 C 16 12 60A 8 30A 4 90A IC = 10A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGA50N100BNTD2 Rev. A 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 60A 8 30A 90A 4 IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 60A 8 IC = 10A 0 20 0 Figure 9. Capacitance Characteristics 90A 30A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 8000 Common Emitter Capacitance [pF] 6000 Gate-Emitter Voltage, VGE [V] o Cies Common Emitter VGE = 0V, f = 1MHz o 4000 TC = 25 C 2000 Coes VCC = 200V 9 400V 600V 6 3 Cres 0 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 55 110 165 220 Gate Charge, Qg [nC] 275 Figure 12. Load Current vs. Frequency 120 500 VCC = 600V Load Current [A] load Current : peak of square wave 100 Collector Current, Ic [A] TC = 25 C 12 10µs 10 100µs 1ms 1 100 80 60 10 ms 40 DC *Notes: 0.1 o 1. TC = 25 C : 50% 20 Duty cycle o o T = 100 C 2. TJ = 150 C 3. Single Pulse 0.01 1 C Power Dissipation = 63W 0 0 10 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] FGA50N100BNTD2 Rev. A 4 1 2 10 10 Frequency [kHz] 3 10 www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 2000 1000 100 Switching Time [ns] Switching Time [ns] td(off) tr td(on) Common Emitter VCC = 600V, VGE = 15V IC = 60A 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 60A o TC = 25 C o TC = 25 C o TC = 125 C 10 10 o 20 30 40 Gate Resistance, RG [Ω] TC = 125 C 10 10 50 20 30 40 50 Gate Resistance, RG [Ω] Figure 15. Turn-on Characteristics vs. Collector Current Figure 16. Turn-off Characteristics vs. Collector Current 200 1000 100 td(off) Switching Time [ns] Switching Time [ns] tr td(on) Common Emitter VGE = 15V, RG = 10Ω Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C tf o TC = 125 C o TC = 25 C o TC = 125 C 10 10 20 30 40 50 60 70 80 90 10 10 100 20 30 Collector Current, IC [A] 40 50 60 70 80 90 100 Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance Fig 18. Switching Loss vs. Collector Current 30 50 Common Emitter VCC = 600V, VGE = 15V 10 Switching Loss [mJ] IC = 60A Switching Loss [mJ] o TC = 25 C o 10 TC = 125 C Eon Eoff Eon Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 60A o TC = 25 C o TC = 125 C 1 10 20 30 40 Gate Resistance, RG [Ω] FGA50N100BNTD2 Rev. A 0.1 10 50 20 30 40 50 60 70 80 90 100 Collector Current, IC [A] 5 www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 19. Turn off Switching SOA Characterisics Figure 20. Forward Characteristics 200 250 100 100 Forward Current, IF [A] Collector Current, IC [A] o 10 TJ = 125 C 10 o TJ = 25 C 1 o Safe Operating Area TC = 25 C o VGE = 15V, TC = 125 C o TC = 125 C 1 1 10 0.1 1000 3000 100 0 1 Collector-Emitter Voltage, VCE [V] Figure 21. Reverse Current Reverse Recovery Time, Trr[ns] 1 0.1 0.01 o TJ = 25 C 200 400 600 800 Reverse Voltage, VR [V] Trr Irr 6 40 4 20 2 IF = 60A o 0 20 1000 8 60 TC = 25 C 40 60 Reverse Recovery Current, Irr[A] o TJ = 125 C 10 6 10 80 300 Reverse Current , IR [µA] 5 Figure 22. Reverse Recovery Characteristics vs. di/dt 100 1E-3 50 2 3 4 Forward Voltage, VF [V] 0 80 100 120 140 160 180 200 di/dt[A/µs] Figure 23. Reverse Recovery Characteristics vs. Forward Current 6 Trr Irr 70 4 di/dt = 100A/µs o TC = 25 C 60 10 20 30 40 50 Forward Current,IF[A] FGA50N100BNTD2 Rev. A Reverse Recovery Current, Irr[A] Reverse Recovery Time, Trr [ns] 80 2 60 6 www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 24.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA50N100BNTD2 Rev. A 7 www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Mechanical Dimensions TO-3PN FGA50N100BNTD2 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 FGA50N100BNTD2 Rev. A 9 www.fairchildsemi.com FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.