FGH40N65UFD tm 650V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC TL V 80 A A @ TC = 25 C @ TC = 25oC 290 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds ± 20 A o Storage Temperature Range V 40 Maximum Power Dissipation Tstg Units 650 120 o Pulsed Collector Current @ TC = 100 C 116 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.45 o C/W RθJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGH40N65UFD Rev. A1 - 1 40 oC/W www.fairchildsemi.com FGH40N65UFD 600V, 40A Field Stop IGBT March 2009 Device Marking Device Package Packaging Type FGH40N65UFD FGH40N65UFDTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 650 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 4.0 5.0 6.5 V IC = 40A, VGE = 15V - 1.8 2.4 V IC = 40A, VGE = 15V, TC = 125oC - 2.0 - V - 2110 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 200 - pF - 60 - pF Switching Characteristics td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 44 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets td(on) tr Rise Time - 45 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.69 - mJ Ets Total Switching Loss - 1.89 - mJ - 112 - ns - 30 60 ns - 1.19 - mJ - 0.46 - mJ Total Switching Loss - 1.65 - mJ Turn-On Delay Time - 24 - ns Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGH40N65UFD Rev. A1 VCC = 400V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 40A, VGE = 15V 2 - 40 - ns - 1.2 - mJ - 120 - nC - 14 - nC - 58 - nC www.fairchildsemi.com FGH40N65UFD 600V, 40A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 20A IES =20A, dIES/dt = 200A/µs Qrr Diode Reverse Recovery Charge FGH40N65UFD Rev. A1 Min. Typ. Max TC = 25oC - 1.95 2.6 TC = 125oC - 1.85 - TC = 25oC - 45 - - 140 - TC = 25oC - 75 - o - 375 - TC = 125oC TC = 125 C 3 Units V ns nC www.fairchildsemi.com FGH40N65UFD 600V, 40A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 120 120 20V 15V TC = 125 C 12V 15V 20V 100 Collector Current, IC [A] 100 Collector Current, IC [A] o o TC = 25 C 80 60 10V 40 12V 80 60 10V 40 20 20 VGE = 8V VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V 100 o TC = 125 C 80 Common Emitter VCE = 20V 100 o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 6.0 Figure 4. Transfer Characteristics 120 60 40 20 o TC = 25 C o TC = 125 C 80 60 40 20 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 80A 2.5 40A 2.0 IC = 20A 1.5 1.0 25 12 4 Common Emitter o TC = - 40 C 16 12 8 40A 4 80A IC = 20A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGH40N65UFD Rev. A1 7 8 9 10 11 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 3.0 6 Figure 6. Saturation Voltage vs. VGE 3.5 Collector-Emitter Voltage, VCE [V] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N65UFD 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C 16 12 8 80A 40A 4 IC = 20A 0 4 TC = 125 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 8 12 16 Gate-Emitter Voltage, VGE [V] 16 12 8 40A IC = 20A 0 20 4 Figure 9. Capacitance Characteristics 20 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz Ciss o Gate-Emitter Voltage, VGE [V] 4000 Capacitance [pF] 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 5000 o TC = 25 C 3000 Coss 2000 1000 Crss 0 0.1 TC = 25 C 12 Vcc = 100V 200V 300V 9 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 Gate Charge, Qg [nC] 150 Figure 12. Turn-on Characteristics vs. Gate Resistance 400 200 100 10µs 100 Switching Time [ns] Collector Current, Ic [A] 80A 4 100µs 10 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 125 C 0.01 10 1 FGH40N65UFD Rev. A1 10 100 Collector-Emitter Voltage, VCE [V] 1000 0 10 20 30 40 50 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGH40N65UFD 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 5500 500 Common Emitter VGE = 15V, RG = 10Ω o 1000 tr TC = 25 C o o TC = 25 C Switching Time [ns] Switching Time [ns] Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 125 C td(off) 100 TC = 125 C 100 td(on) tf 10 20 10 0 10 20 30 40 50 40 Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current 10 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V o IC = 40A TC = 25 C o TC = 125 C Switching Loss [mJ] o Switching Time [ns] 80 Figure 16. Switching Loss vs. Gate Resistance 600 td(off) 100 tf 10 20 40 60 TC = 25 C o TC = 125 C 1 0.3 0 80 Figure 17. Switching Loss vs. Collector Current Eon Eoff Collector Current, IC [A] 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 10 200 Common Emitter VGE = 15V, RG = 10Ω 100 Collector Current, IC [A] Eon o TC = 25 C Switching Loss [mJ] 60 Collector Current, IC [A] o TC = 125 C Eoff 1 10 Safe Operating Area o VGE = 15V, TC = 125 C 0.1 20 1 40 60 1 80 FGH40N65UFD Rev. A1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 6 www.fairchildsemi.com FGH40N65UFD 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs. Reverse Voltage 80 200 100 o Reverse Current , IR [µA] Forward Current, IF [A] TJ = 125 C o TJ = 125 C 10 o TJ = 25 C o TJ = 75 C o 1 TC = 25 C 10 o TJ = 75 C 1 0.1 o o TJ = 25 C TC = 75 C o TC = 125 C 0.2 0 1 2 3 Forward Voltage, VF [V] 0.01 50 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] 100 Stored Recovery Charge, Qrr [nC] 200 400 Reverse Voltage, VR [V] 200A/µs 80 60 di/dt = 100A/µs 40 50 di/dt = 100A/µs 200A/µs 40 30 20 5 10 20 30 Forward Current, IF [A] 5 40 10 20 30 Forward Current, IF [A] 40 Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.01 0.05 0.02 0.01 0.1 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH40N65UFD Rev. A1 7 www.fairchildsemi.com FGH40N65UFD 600V, 40A Field Stop IGBT Typical Performance Characteristics FGH40N65UFD 600V, 40A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH40N65UFD Rev. A1 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com