FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35A • High Input Impedance Applications • Induction Heating And Microwave Oven • Soft Switching Applications C G E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ± 25 V Collector Current @ TC = 25oC 70 A Collector Current @ TC = 100oC 35 A ICM (1) Pulsed Collector Current @ TC = 25oC 105 A IF Diode Continuous Forward Current @ TC = 100oC 40 A IC PD o Maximum Power Dissipation @ TC = 25 C 368 W Maximum Power Dissipation @ TC = 100oC 147 W TJ Operating Junction Temperature -55 to +150 o C Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) Parameter Ratings Thermal Resistance, Junction to Case Units 0.34 o C/W C/W RθJC(Diode) Thermal Resistance, Junction to Case 0.9 o RθJA Thermal Resistance, Junction to Ambient 25 oC/W ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. A 1 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT February 2010 Device Marking Device Package Reel Size Tape Width Quantity FGL35N120FTD FGL35N120FTDTU TO-264 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 35mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 6.2 7.5 V IC = 35A, VGE = 15V - 1.68 2.2 V IC = 35A, VGE = 15V, TC = 125oC - 2.0 - V - 5090 - pF VCE = 30V, VGE = 0V, f = 1MHz - 180 - pF - 95 - pF - 34 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 63 - ns td(off) Turn-Off Delay Time - 172 - ns tf Fall Time - 107 - ns Eon Turn-On Switching Loss - 2.5 - mJ Eoff Turn-Off Switching Loss - 1.7 - mJ Ets Total Switching Loss - 4.2 - mJ VCC = 600V, IC = 35A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC td(on) Turn-On Delay Time - 33 - ns tr Rise Time - 66 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGL35N120FTD Rev. A VCC = 600V, IC = 35A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 600V, IC = 35A, VGE = 15V 2 - 180 - ns - 146 - ns - 3.1 - mJ - 2.1 - mJ - 5.2 - mJ - 210 - nC - 42 - nC - 101 - nC www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr TC = 25°C unless otherwise noted Test Conditions IF = 35A Min. Typ. Max TC = 25oC - 2.7 3.4 TC = 125oC - 2.5 - TC = 25oC - 337 - - 520 - - 7.6 - - 12.9 - TC = TC = 25oC IF = 35A, di/dt = 200A/µs TC = Diode Reverse Recovery Charge FGL35N120FTD Rev. A 125oC 3 125oC TC = 25oC - 1292 - TC = 125oC - 3377 - Units V ns A nC www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 180 180 o TC = 25 C 20V 150 o TC = 125 C 17V 15V 20V 120 90 10V 60 9V 17V 15V 150 12V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 12V 120 90 10V 60 9V 30 30 VGE = 8V VGE = 8V 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 0 Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V 100 TC = 25 C o TC = 125 C 80 Common Emitter VCE = 20V 100 o Collector Current, IC [A] Collector Current, IC [A] 8 Figure 4. Transfer Characteristics 120 60 40 o TC = 25 C o TC = 125 C 80 60 40 20 20 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 2.4 2.2 2.0 35A 1.8 1.6 IC = 18A 1.4 1.2 25 12 20 70A Collector-Emitter Voltage, VCE [V] 2.6 Common Emitter VGE = 15V 6 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 2.8 Collector-Emitter Voltage, VCE [V] 2 4 6 Collector-Emitter Voltage, VCE [V] o TC = 25 C 16 12 8 70A 35A 4 IC = 18A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGL35N120FTD Rev. A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Load Current vs. Frequency 150 20 Common Emitter VCC = 600V TC = 125 C load Current : peak of square wave 16 120 Load Current [A] Collector-Emitter Voltage, VCE [V] o 12 8 70A 90 60 35A 4 30 Duty cycle : 50% o T = 100 C C IC = 18A 0 4 0 8 12 16 Gate-Emitter Voltage, VGE [V] 20 1 Figure 9. Capacitance Characteristics 10 100 Frequency [kHz] 1000 Figure 10. Gate Charge Characteristics 15 8000 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] Cies o TC = 25 C 6000 Capacitance [pF] Power Dissipation = 147W 4000 Coes 2000 TC = 25 C 600V 12 VCC = 200V 400V 9 6 3 Cres 0 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 150 200 Gate Charge, Qg [nC] 250 Figure 12. Turn-on Characteristics vs. Gate Resistance 200 400 10µs 10 Switching Time [ns] Collector Current, Ic [A] 100 100µs 1ms 1 10 ms DC *Notes: 0.1 100 tr td(on) o 1. TC = 25 C o TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 1000 Collector-Emitter Voltage, VCE [V] FGL35N120FTD Rev. A Common Emitter VCC = 600V, VGE = 15V IC = 35A o TC = 125 C 20 0 4000 10 20 30 40 50 Gate Resistance, RG [Ω ] 5 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 200 2000 Common Emitter VCC = 600V, VGE = 15V IC = 35A 1000 100 o td(off) o TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C tf tr td(on) Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C o TC = 125 C 10 10 50 0 10 20 30 Gate Resistance, RG [Ω ] 40 50 Figure 15. Turn-off Characteristics vs. Collector Current 20 30 40 50 Collector Current, IC [A] 70 Figure 16.Switching Loss vs. Gate Resistance 600 8 Common Emitter VGE = 15V, RG = 10Ω Eon o TC = 25 C o TC = 125 C Switching Loss [mJ] Switching Time [ns] 60 td(off) 100 tf Eoff Common Emitter VCC = 600V, VGE = 15V 1 IC = 35A o TC = 25 C o TC = 125 C 50 10 0.3 20 30 40 50 Collector Current, IC [A] 60 70 Figure 17. Switching Loss vs. Collector Current 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 Figure 18. Turn off Switing SOA Characteristics 200 10 100 Collector Current, IC [A] Switching Loss [mJ] Eon Eoff 1 Common Emitter VGE = 15V, RG = 10Ω o 10 TC = 25 C Safe Operating Area o o TC = 125 C 0.3 10 VGE = 15V, TC = 125 C 1 20 FGL35N120FTD Rev. A 30 40 50 Collector Current, IC [A] 60 1 70 6 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current 8 10 Reverse Recovery Currnet, Irr [A] Forward Current, IF [A] 50 o TJ = 125 C o TJ = 25 C 1 o TC = 25 C di/dt = 200A/µs 7 6 5 di/dt = 100A/µs 4 o 0.2 0.0 TC = 125 C 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 3 10 3.0 Figure 21. Stored Charge 600 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [µC] 40 Figure 22. Reverse Recovery Time 1.4 1.2 20 30 Forward Current, IF [A] di/dt = 200A/µs 1.0 di/dt = 100A/µs 0.8 0.6 10 20 30 500 di/dt = 100A/µs 400 di/dt = 200A/µs 300 200 100 10 40 20 Forward Current, IF [A] 30 40 Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 PDM 0.01 0.02 t1 0.01 single pulse 0.001 1E-5 0.0001 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGL35N120FTD Rev. A 7 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics FGL35N120FTD 1200V, 35A Trench IGBT Mechanical Dimensions Dimensions in Millimeters FGL35N120FTD Rev. A 8 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I45 FGL35N120FTD Rev. 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