FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) =2.2V @ IC = 20A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Welder, UPS, SMPS, PFC C COLLECTOR (FLANGE) TO-263AB/D2-PAK G C G E E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF IFM(1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC Pulsed Collector Current Diode Forward Current Diode Forward Current Ratings Units 600 V ± 20 V 40 A 20 A @ TC = 25 C 60 A @ TC = 25oC 20 A 10 A 60 A W o @ TC = 100oC Pulsed Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 208 Maximum Power Dissipation @ TC = 100oC 83 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 C C oC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2008 Fairchild Semiconductor Corporation FGB20N60SFD Rev. A 1 www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT October 2010 Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.6 o RθJC(Diode) Thermal Resistance, Junction to Case - 2.6 oC/W RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 40 oC/W C/W Notes: 2: Mounted on 1” square PCB (FR4 or G-10 material) Package Marking and Ordering Information Device Marking Device Package Rel Size Tape Width Quantity FGB20N60SFD FGB20N60SFD TO-263AB/D2-PAK 13” Dia - 800 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA - 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250μA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 5.0 6.5 V IC = 20A, VGE = 15V - 2.2 2.8 V IC = 20A, VGE = 15V, TC = 125oC - 2.4 - V - 940 - pF - 110 - pF - 40 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 90 - ns tf Fall Time - 24 48 ns Eon Turn-On Switching Loss - 0.37 - mJ Eoff Turn-Off Switching Loss - 0.16 - mJ Ets Total Switching Loss - 0.53 - mJ VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 95 - ns tf Fall Time - 28 - ns VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC Eon Turn-On Switching Loss - 0.4 - mJ Eoff Turn-Off Switching Loss - 0.28 - mJ Ets Total Switching Loss - 0.69 - mJ FGB20N60SFD Rev. A 2 www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT Thermal Characteristics Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 20A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted 65 - nC - 7 - nC - 33 - nC TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max o - 1.9 2.5 125oC - 1.7 - TC = 25oC - 34 - o TC = 125 C - 57 - TC = 25oC - 41 - - 96 - TC = 25 C IF = 10A TC = IF =10A, dIF/dt = 200A/μs FGB20N60SFD Rev. A - TC = 3 125oC Units V ns nC www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 60 o TC = 25 C 20V Collector Current, IC [A] 15V 10V 20 VGE = 8V 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 60 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 125 C 40 20 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] 40A 20A 2 IC = 10A 1 25 20 0 Common Emitter VGE = 15V 3 o TC = 125 C 40 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 10V VGE = 8V 20 60 Collector-Emitter Voltage, VCE [V] 12V 40 6.0 Figure 3. Typical Saturation Voltage Characteristics 0 20V 15V 40 0 0.0 o TC = 125 C 12V Collector Current, IC [A] 60 Figure 2. Typical Output Characteristics Common Emitter o TC = -40 C 16 12 8 40A 4 20A IC = 10A 0 50 75 100 125 o Collector-Emitter Case Temperature, TC [ C] FGB20N60SFD Rev. A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o TC = 25 C o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 20A IC = 10A 0 20 Figure 9. Capacitance Characteristics 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 2500 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o 2000 Capacitance [pF] 40A 4 TC = 25 C Cies 1500 1000 Coes 500 Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] TC = 25 C 12 Figure 11. SOA Characteristics 200V 9 6 3 0 30 300V VCC = 100V 0 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100μs 10 Switching Time [ns] Collector Current, Ic [A] 10μs 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C tr td(on) 10 o TC = 25 C o 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 Collector-Emitter Voltage, VCE [V] FGB20N60SFD Rev. A Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 125 C 5 1000 5 0 10 20 30 40 Gate Resistance, RG [Ω] 50 60 www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 200 1000 Common Emitter VCC = 400V, VGE = 15V IC = 20A Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C o TC = 25 C td(off) o TC = 125 C 100 tf 10 0 10 20 30 40 TC = 125 C Switching Time [ns] Switching Time [ns] o 50 tr td(on) 10 3 60 0 10 Figure 15. Turn-off Characteristics vs. Collector Current 40 Figure 16. Switching Loss vs. Gate Resistance Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω o IC = 20A TC = 25 C o o Switching Loss [mJ] TC = 125 C td(off) 100 TC = 25 C 1 o TC = 125 C Eon Eoff tf 10 30 3 300 Switching Time [ns] 20 Collector Current, IC [A] Gate Resistance, RG [Ω] 0 10 20 30 0.1 40 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure 18. Turn off Switching SOA Characteristics 80 10 Common Emitter VGE = 15V, RG = 10Ω o o TC = 125 C 1 Collector Current, IC [A] Switching Loss [mJ] TC = 25 C Eon Eoff 0.1 10 Safe Operating Area o 0.02 0 10 20 30 1 40 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] FGB20N60SFD Rev. A VGE = 15V, TC = 125 C 6 www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 100 40 o TJ = 125 C Forward Current, IF [A] Reverse Current , IR [μA] TJ = 75 C 10 o TJ = 25 C 1 0.1 0 1 2 3 Forward Voltage, VF [V] o TC = 75 C 0.1 0 100 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] 60 Stored Recovery Charge, Qrr [nC] o TC = 25 C 0.01 1E-3 4 TC = 125 C 1 Figure 21. Stored Charge 50 200A/μs 40 30 di/dt = 100A/μs 20 10 o 10 o 0 5 10 15 50 di/dt = 100A/μs 40 20 10 20 200A/μs 30 0 5 Forward Current, IF [A] 10 15 20 Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 single pulse 0.01 -5 10 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] FGB20N60SFD Rev. A 7 www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics FGB20N60SFD 600V, 20A Field Stop IGBT Mechanical Dimensions TO-263AB/D2-PAK FGB20N60SFD Rev. A 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FGB20N60SFD Rev. A 9 www.fairchildsemi.com FGB20N60SFD 600V, 20A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM™ F-PFS™ AccuPower™ ®* PowerTrench® FRFET® Auto-SPM™ Global Power ResourceSM PowerXS™ Build it Now™ The Power Franchise® ® Programmable Active Droop™ Green FPS™ CorePLUS™ QFET® Green FPS™ e-Series™ CorePOWER™ Gmax™ QS™ CROSSVOLT™ TinyBoost™ GTO™ Quiet Series™ CTL™ TinyBuck™ IntelliMAX™ RapidConfigure™ Current Transfer Logic™ TinyCalc™ ™ ISOPLANAR™ DEUXPEED® TinyLogic® Dual Cool™ MegaBuck™ TINYOPTO™ ® EcoSPARK Saving our world, 1mW/W/kW at a time™ MICROCOUPLER™ TinyPower™ EfficentMax™ SignalWise™ MicroFET™ TinyPWM™ SmartMax™ ESBC™ MicroPak™ TinyWire™ SMART START™ MicroPak2™ ® TriFault Detect™ SPM® MillerDrive™ TRUECURRENT™* ® STEALTH™ MotionMax™ Fairchild μSerDes™ ® SuperFET™ Motion-SPM™ Fairchild Semiconductor SuperSOT™-3 OptiHiT™ FACT Quiet Series™ SuperSOT™-6 OPTOLOGIC® FACT® UHC® OPTOPLANAR® SuperSOT™-8 FAST® ® Ultra FRFET™ SupreMOS™ FastvCore™ UniFET™ SyncFET™ FETBench™ VCX™ Sync-Lock™ FlashWriter® * PDP SPM™ VisualMax™ FPS™ XS™