FGH20N60UFD 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.8V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD Description Collector to Emitter Voltage Ratings Units 600 V ± 20 V Collector Current @ TC = 25oC 40 A Collector Current @ TC = 100oC Gate to Emitter Voltage Pulsed Collector Current Diode Forward Current Diode Forward Current 20 A o @ TC = 25 C 60 A @ TC = 25oC 20 A @ TC = 100oC Pulsed Diode Maximum Forward Current 10 A 60 A W Maximum Power Dissipation @ TC = 25oC 165 Maximum Power Dissipation @ TC = 100oC 66 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2008 Fairchild Semiconductor Corporation FGH20N60UFD Rev. A1 1 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT April 2011 Device Marking Device Package Packaging Type FGH20N60UFD FGH20N60UFDTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = 0V, IC = 250mA DBVCES DTJ Temperature Coefficient of Breakdown Voltage V GE = 0V, IC = 250mA - 0.6 - V/oC ICES Collector Cut-Off Current V CE = VCES, VGE = 0V - - 250 mA IGES G-E Leakage Current V GE = VGES, VCE = 0V - - ±400 nA IC = 250mA, V CE = VGE 4.0 5.0 6.5 V IC = 20A, VGE = 15V - 1.8 2.4 V IC = 20A, VGE = 15V, TC = 125oC - 2.0 - V - 940 - pF - 110 - pF - 40 - pF On Characteristics V GE(th) G-E Threshold Voltage V CE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics C ies Input Capacitance C oes Output Capacitance C res Reverse Transfer Capacitance V CE = 30V, V GE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 17 - ns td(off) Turn-Off Delay Time - 87 - ns tf Fall Time - 32 64 ns E on Turn-On Switching Loss - 0.38 - mJ E off Turn-Off Switching Loss - 0.26 - mJ E ts Total Switching Loss - 0.64 - mJ td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 92 - ns tf Fall Time - 63 - ns E on Turn-On Switching Loss - 0.41 - mJ E off Turn-Off Switching Loss - 0.36 - mJ E ts Total Switching Loss - 0.77 - mJ Qg Total Gate Charge - 63 - nC Qge Gate to Emitter Charge - 7 - nC Qgc Gate to Collector Charge - 32 - nC FGH20N60UFD Rev. A1 V CC = 400V, IC = 20A, RG = 10W, V GE = 15V, Inductive Load, TC = 25oC V CC = 400V, IC = 20A, RG = 10W, V GE = 15V, Inductive Load, TC = 125oC V CE = 400V, IC = 20A, V GE = 15V 2 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter Typ. Max. Units R qJC(IGBT) Thermal Resistance, Junction to Case - 0.76 oC/W R qJC(Diode) Thermal Resistance, Junction to Case - 2.51 o R qJA Thermal Resistance, Junction to Ambient - 40 Electrical Characteristics of the Diode Symbol Parameter V FM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 10A IES =10A, dIES/dt = 200A/ms FGH20N60UFD Rev. A1 C/W oC/W 3 Min. Typ. Max TC = 25oC - 1.9 2.5 TC = 125oC - 1.7 - TC = 25oC - 34 - TC = 125oC - 57 - TC = 25oC - 41 - TC = 125oC - 96 - Unit s V ns nC www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Thermal Characteristics Figure 1. Typical Output Characteristics 60 Figure 2. Typical Output Characteristics 60 o TC = 25 C 20V o TC = 125 C 12V 20V Collector Current, IC [A] Collector Current, IC [A] 10V 40 20 VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 20 VGE = 8V 6.0 60 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 60 o TC = 125 C 40 20 0 1 2 3 Collector-Emitter Voltage, VCE [V] 20 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 2.8 40A 2.4 2.0 20A 1.6 IC = 10A 1.2 o TC = 125 C 40 12 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 3.2 TC = 25 C 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 10V 40 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 0 12V 15V 15V Common Emitter o TC = -40 C 16 12 8 40A 4 20A IC = 10A 0.8 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGH20N60UFD Rev. A1 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Gate-Emitter Voltage, VGE [V] Cies Coes Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 20A 4 40A IC = 10A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 o o 500 8 Common Emitter TC = 25 C 1000 12 15 Common Emitter VGE = 0V, f = 1MHz 1500 16 Figure 10. Gate charge Characteristics 2500 2000 TC = 125 C 0 Figure 9. Capacitance Characteristics Capacitance [pF] Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE TC = 25 C 12 Figure 11. SOA Characteristics VCC = 100V 9 200V 6 3 0 30 300V 0 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100ms 10 Switching Time [ns] Collector Current, Ic [A] 10ms 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] FGH20N60UFD Rev. A1 tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 25 C o TC = 125 C 5 1000 5 0 10 20 30 40 Gate Resistance, RG [W ] 50 60 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 200 Common Emitter VCC = 400V, VGE = 15V IC = 20A Common Emitter VGE = 15V, RG = 10W 100 o TC = 25 C o o o TC = 125 C td(off) 100 tf 10 0 10 20 30 40 TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C 50 tr td(on) 10 3 60 0 10 Gate Resistance, RG [W ] Figure 15. Turn-off Characteristics vs. Collector Current 40 Figure 16. Switching Loss vs. Gate Resistance Common Emitter VGE = 15V, RG = 10W Common Emitter VCC = 400V, VGE = 15V o IC = 20A TC = 25 C o o Switching Loss [mJ] TC = 125 C Switching Time [ns] 30 3 300 td(off) 100 tf 10 20 Collector Current, IC [A] 0 10 20 30 TC = 25 C 1 o TC = 125 C Eon Eoff 0.1 40 0 Collector Current, IC [A] Figure17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [W ] 50 60 Figure18. Turn off Switching SOA Characteristics 10 100 Common Emitter VGE = 15V, RG = 10W o Eon o TC = 125 C 1 Collector Current, IC [A] Switching Loss [mJ] TC = 25 C Eoff 0.1 10 Safe Operating Area o 0.02 0 10 20 30 1 40 Collector Current, IC [A] FGH20N60UFD Rev. A1 VGE = 15V, TC = 125 C 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 100 40 o o 10 o TJ = 75 C 10 Reverse Current , IR [mA] Forward Current, IF [A] TJ = 125 C o TJ = 25 C 1 o TC = 25 C o TC = 75 C TC = 125 C 1 o TC = 75 C 0.1 o TC = 25 C 0.01 o TC = 125 C 0.1 0 1 2 3 Forward Voltage, VF [V] 1E-3 4 Figure 21. Stored Charge 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 22. Reverse Recovery Time Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 100 60 0.05 200A/ms 0.04 0.03 di/dt = 100A/ms 0.02 0.01 0 0 5 10 15 50 di/dt = 100A/ms 40 30 20 10 20 200A/ms 0 5 10 15 20 Forward Current, IF [A] Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM single pulse 1E-3 1E-5 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH20N60UFD Rev. A1 7 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics FGH20N60UFD 600V, 20A Field Stop IGBT Mechanical Dimensions TO247AB (FKS PKG CODE 001) FGH20N60UFD Rev. A1 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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