FGH20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.8V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Ratings Units 600 V ± 20 V Collector Current @ TC = 25oC 40 A Collector Current @ TC = 100oC 20 A Pulsed Collector Current @ TC = 25oC 60 A Maximum Power Dissipation @ TC = 25oC 165 W Maximum Power Dissipation o 66 W TJ Operating Junction Temperature @ TC = 100 C -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.76 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 2.51 o C/W 40 o C/W RθJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGH20N60UFD Rev. A - 1 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT September 2008 Device Marking Device Package Packaging Type FGH20N60UFD FGH20N60UFDTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 4.0 5.0 6.5 V IC = 20A, VGE = 15V - 1.8 2.4 V IC = 20A, VGE = 15V, TC = 125oC - 2.0 - V - 940 - pF - 110 - pF - 40 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 17 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss td(on) Turn-On Delay Time tr td(off) tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.36 - mJ Ets Total Switching Loss - 0.77 - mJ - 87 - ns - 32 64 ns - 0.38 - mJ - 0.26 - mJ - 0.64 - mJ - 13 - ns Rise Time - 16 - ns Turn-Off Delay Time - 92 - ns - 63 - ns - 0.41 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGH20N60UFD Rev. A VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 20A, VGE = 15V 2 - 63 - nC - 7 - nC - 32 - nC www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 10A IES =10A, dIES/dt = 200A/µs Qrr Diode Reverse Recovery Charge FGH20N60UFD Rev. A Min. Typ. Max TC = 25oC - 1.9 2.5 TC = 125oC - 1.7 - TC = 25oC - 34 - o TC = 125 C - 57 - TC = 25oC - 41 - o - 96 - TC = 125 C 3 Units V ns nC www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 60 Figure 2. Typical Output Characteristics 60 o TC = 25 C 20V o TC = 125 C 20V 12V Collector Current, IC [A] Collector Current, IC [A] 10V 40 20 VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 20 VGE = 8V 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 60 60 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 10V 40 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics o TC = 125 C 40 20 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] o TC = 125 C 40 20 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 3.2 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 2.8 40A 2.4 2.0 20A 1.6 IC = 10A 1.2 TC = 25 C 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 12V 15V 15V Common Emitter o TC = -40 C 16 12 8 40A 4 20A IC = 10A 0.8 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGH20N60UFD Rev. A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 20A 4 40A IC = 10A 0 20 0 Figure 9. Capacitance Characteristics 20 Figure 10. Gate charge Characteristics 2500 15 Common Emitter VGE = 0V, f = 1MHz Common Emitter Gate-Emitter Voltage, VGE [V] o o 2000 Capacitance [pF] 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 25 C Cies 1500 1000 Coes Cres 500 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] TC = 25 C 12 300V VCC = 100V 9 200V 6 3 0 30 0 Figure 11. SOA Characteristics 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100µs 10 Switching Time [ns] Collector Current, Ic [A] 10µs 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 25 C o TC = 125 C 5 0.01 1 FGH20N60UFD Rev. A 10 100 Collector-Emitter Voltage, VCE [V] 0 1000 5 10 20 30 40 Gate Resistance, RG [Ω] 50 60 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 200 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V IC = 20A 100 o TC = 25 C o o o TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C td(off) 100 tf 10 0 10 20 30 40 50 TC = 125 C tr td(on) 10 3 60 0 10 Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current 30 40 Figure 16. Switching Loss vs. Gate Resistance 3 300 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V o IC = 20A TC = 25 C o o Switching Loss [mJ] TC = 125 C Switching Time [ns] 20 Collector Current, IC [A] td(off) 100 tf 10 0 10 20 30 o TC = 125 C 0 Collector Current, IC [A] Figure17. Switching Loss vs. Collector Current Eon Eoff 0.1 40 TC = 25 C 1 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure18. Turn off Switching SOA Characteristics 10 100 Common Emitter VGE = 15V, RG = 10Ω o o Collector Current, IC [A] Switching Loss [mJ] TC = 25 C Eon TC = 125 C 1 Eoff 0.1 10 Safe Operating Area o 0.02 0 10 20 30 40 1 Collector Current, IC [A] FGH20N60UFD Rev. A VGE = 15V, TC = 125 C 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 100 40 o o 10 o TJ = 75 C 10 Reverse Current , IR [µA] Forward Current, IF [A] TJ = 125 C o TJ = 25 C 1 o TC = 25 C o TC = 125 C 1 o TC = 75 C 0.1 o TC = 25 C 0.01 TC = 75 C o TC = 125 C 1E-3 0.1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] 0.05 Stored Recovery Charge, Qrr [nC] 100 200A/µs 0.04 0.03 di/dt = 100A/µs 0.02 50 di/dt = 100A/µs 40 200A/µs 30 20 10 0.01 0 5 10 15 0 20 5 10 15 20 Forward Current, IF [A] Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH20N60UFD Rev. A 7 www.fairchildsemi.com FGH20N60UFD 600V, 20A Field Stop IGBT Typical Performance Characteristics FGH20N60UFD 600V, 20A Field Stop IGBT Mechanical Dimensions TO247AB (FKS PKG CODE 001) FGH20N60UFD Rev. 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