Inchange Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6312 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6313 Open emitter -60 2N6314 -80 2N6312 -40 2N6313 Emitter-base voltage UNIT -40 Open base 2N6314 VEBO VALUE -60 V V -80 Open collector -5 V IC Collector current -5 A ICM Collector current-peak -10 A IB Base current -2 A PD Total Power Dissipation 75 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 2.32 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6312 VCEO(SUS) Collector-emitter sustaining voltage 2N6313 MIN TYP. MAX UNIT -40 IC=-0.1A ;IB=0 2N6314 V -60 -80 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -0.7 V VCEsat-2 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -2.0 V VCEsat-3 Collector-emitter saturation voltage IC=-5A; IB=-1.25A -4.0 V Base-emitter on voltage IC=-1.5A ; VCE=-2V -1.4 V -1.0 mA -50 μA VBE ICEO ICBO Collector cut-off current Collector cut-off current 2N6312 VCE=-30V; IB=0 2N6313 VCE=-50V; IB=0 2N6314 VCE=-70V; IB=0 2N6312 VCB=-40V; IE=0 2N6313 VCB=-60V; IE=0 2N6314 VCB=-80V; IE=0 ICEX Collector cut-off current VCE=Rated VCE; VBE(off)=1.5V TC=125℃ -0.1 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.5 mA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 hFE-2 DC current gain IC=-1.5A ; VCE=-2V 25 hFE-3 DC current gain IC=-3A ; VCE=-2V 10 hFE-4 DC current gain IC=-5A ; VCE=-4V 4 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-0.5A;VCE=-10V;f=1.0MHz 2 100 300 4 pF MHz Inchange Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3