Inchange Semiconductor Product Specification 2N5498 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Low saturation voltage ・High Safe Operating Area APPLICATIONS ・Designed for high power audio, disk head positioners and other linear applications. ・These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 130 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 4 A PD Total Power Dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5498 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 130 V VCER Collector-emitter sustaining voltage IC=0.2A ;RBE=100Ohm 150 V VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=15A ;IB=3A 4.0 V ICEO Collector cut-off current VCE=130V; IB=0 2.0 mA ICEX Collector cut-off current VCE=130V; VBE(off)=1.5V TC=150℃ 2.0 10.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=15A ; VCE=5V 10 Transition frequency IC=1A ; VCE=10V 1 fT 2 50 MHz Inchange Semiconductor Product Specification 2N5498 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3