Inchange Semiconductor Product Specification 2N5758 2N5759 2N5760 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS 2N5758 Collector-base voltage 2N5759 EMIC Open emitter S E G N A H C IN Collector-emitter voltage 2N5760 2N5758 2N5759 Open base 2N5760 Emitter-base voltage OND VALUE UNIT 100 120 V 140 100 120 V 140 Open collector 7 V IC Collector current 6 A ICM Collector current-peak 10 A IB Base current 4 A PD Total Power Dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5758 2N5759 2N5760 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N5758 VCEO(SUS) Collector-emitter sustaining voltage 2N5759 TYP. MAX UNIT 100 IC=0.2A ;IB=0 V 120 140 2N5760 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=6A ;IB=1.2A 2.0 V Base-emitter on voltage IC=3A ; VCE=2V 1.5 V 1.0 mA VBE ICEO ICEX ICBO IEBO hFE-1 Collector cut-off current 2N5758 VCE=50V; IB=0 2N5759 VCE=60V; IB=0 2N5760 VCE=70V; IB=0 体 半导 Collector cut-off current VCE=ratedVCB; VBE(off)=1.5V TC=150℃ Collector cut-off current VCE=ratedVCB; IB=0 固电 INCH DC current gain VEB=7V; IC=0 2N5758 2N5759 OND EMIC S E G AN Emitter cut-off current IC=3A ; VCE=2V 2N5760 hFE-2 DC current gain IC=6A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz fT Transition frequency IC=0.5A ; VCE=20V 2 R O T UC 1.0 5.0 mA 1.0 mA 1.0 mA 25 100 20 80 15 60 5.0 300 1.0 pF MHz Inchange Semiconductor Product Specification 2N5758 2N5759 2N5760 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3