isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ410 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ410 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.2 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 0.25 mA ICBO Collector Cutoff Current VCB= 200V;VEB(off)=1.5V;TC=125℃ 0.5 mA IEBO Emitter Cutoff current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 1A; VCE=5V 30 hFE-2 DC Current Gain IC= 2.5A; VCE=5V 10 Current-Gain—Bandwidth Product IC= 0.2A; VCE=10V; f=1.0MHz 2.5 fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP MAX 200 B B UNIT V 90 MHz