isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX20 DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) ·High Switching Speed APPLICATIONS ·Designed for LF large signal power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEX Collector-Emitter Voltage- VBE= 1.5V -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A IB Base Current-Continuous -7 A PC Collector Power Dissipation @TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX20 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -140 V VCEX Collector-Emitter Breakdown Voltage IC= -100mA ; VBE= 1.5V -160 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2A -5.0 V VBE(on)-1 Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.7 V VBE(on)-2 Base-Emitter On Voltage IC= -10A ; VCE= -4V -5.7 V ICEX Collector Cutoff Current VCE= -140V;VBE= 1.5V VCE= -140V;VBE=1.5V,TC= 150℃ -1.0 -10 mA ICBO Collector Cutoff Current VCB= -140V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -7.0V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -3A ; VCE= -4V hFE-2 DC Current Gain IC= -10A ; VCE= -4V Current Gain-Bandwidth Product IC= -1A;VCE=-10V;ftest= 1.0MHz fT isc Website：www.iscsemi.cn B 2 20 70 10 4 MHz