ISC MJ424

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ424
DESCRIPTION
·High Collector-Emitter Voltage-VCEX= 700V
·DC Current Gain-hFE=10(min)@ IC=2.5A
·Low Collector-Emitter Saturation VoltageVCE(sat)=0.8Vdc(max)@IC=1Adc
APPLICATIONS
·Designed for use in high voltage applications in deflection
circuits, swithing regulators, inverters, and tine operated
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
2
A
PC
Collector Power [email protected]=25℃
100
W
TJ
Junction Temperature
150
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.75
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ424
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
0.8
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
1.2
V
ICEO
Collector Cutoff Current
VCE=350V; VEB(off)=1.5V
0.25
mA
ICEX
Collector Cutoff Current
VCE=700V; VEB(off)=1.5V
0.5
mA
IEBO
Emitter Cutoff current
VEB=6V; IC= 0
5.0
mA
hFE-1
DC Current Gain
IC= 1A; VCE=5V
30
hFE-2
DC Current Gain
IC= 2.5A; VCE=5V
10
Current-Gain—Bandwidth Product
IC= 0.2A; VCE=10V; f=1.0MHz
2.5
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP
MAX
350
B
B
UNIT
V
90
MHz