isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE 2N6497 350 2N6498 400 2N6499 450 2N6497 250 2N6498 300 2N6499 350 UNIT V V Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A PD Total Power Dissipation@TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Rresistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.56 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6497/6498/6499 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6497 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N6498 MIN IC= 25mA; IB= 0 300 2N6498 V 350 2N6497 Collector-Emitter Saturation Voltage UNIT 250 2N6499 VCE(sat)-1 MAX 1.0 IC= 2.5A; IB= 0.5A 1.25 2N6499 V 1.5 VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A 5.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 2A 2.5 V VCE= 350V;VBE(off)= 1.5V VCE= 175V;VBE(off)= 1.5V ;TC=100℃ VCE= 400V;VBE(off)= 1.5V VCE= 200V;VBE(off)= 1.5V ;TC=100℃ 1.0 10 VCE= 450V;VBE(off)= 1.5V VCE= 225V;VBE(off)= 1.5V ;TC=100℃ 1.0 10 1.0 2N6497 ICEX Collector Cutoff Current 2N6498 2N6499 1.0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 2.5A ; VCE= 10V 10 hFE-2 DC Current Gain IC= 5A ; VCE= 10V 3 Current-Gain—Bandwidth Product IC= 0.25A;VCE= 10V;ftest=1.0MHz 5 fT mA mA 75 MHz Switching Times;Duty Cycle≤2% tr Rise Time tS Storage Time tf Fall Time isc Website：www.iscsemi.cn VCC= 125V,tp= 0.1ms IC=2.5A;IB1= -IB2=0.5 A 1.0 μs 2.5 μs 1.0 μs