isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VALUE BUW64A 140 BUW64B 160 BUW64C 180 BUW64A 90 BUW64B 110 BUW64C 130 UNIT V V Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW64A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUW64A VCEO(SUS) Collector-Emitter Sustaining Voltage BUW64B VCE(sat)-2 VBE(sat) ICEV Collector-Emitter Saturation Voltage Collector Cutoff Current IC= 10mA ; IB= 0 130 IC= 5A; IB= 0.5A 0.8 BUW64C IC= 4A; IB= 0.4A 0.7 IC= 7A; IB= 0.7A 0.8 BUW64A/B IC= 5A; IB= 0.5A 1.4 BUW64C IC= 4A; IB= 0.4A 1.4 BUW64A VCE= 140V;VBE= -1.5V VCE=140V;VBE= -1.5V,TC= 150℃ 0.1 1.0 BUW64B VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V,TC= 150℃ 0.1 1.0 BUW64C VCE= 180V;VBE= -1.5V VCE= 180V;VBE= -1.5V,TC= 150℃ 0.1 1.0 0.1 mA 150 pF B V B B B V V B Emitter Cutoff Current VEB= 7V; IC=0 hFE-1 DC Current Gain IC= 0.2A ; VCE= 2V 30 BUW64/A IC= 5A ; VCE= 2V 20 hFE-2 DC Current Gain BUW64B IC= 4A ; VCE= 2V 20 Output Capacitance IE= 0 ;VCB= 10V; f= 0.1MHz 50 Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V 50 fT UNIT V 110 IEBO COB MAX BUW64A/B Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TYP. 90 BUW64C VCE(sat)-1 MIN mA MHz Switching Times td Delay Time tr Rise Time tstg tf VCC= 70V; tp= 20μs For BUW64A/B IC= 5A; IB1= -IB2= 0.5A Storage Time Fall Time isc Website：www.iscsemi.cn For BUW64C IC= 4A; IB1= -IB2= 0.4A 2 0.1 μs 0.25 μs 1.0 μs 0.5 μs