Inchange Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -230 V VCEO Collector-emitter voltage Open base -230 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -1.5 A PC Collector power dissipation 180 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -1.5 -3.0 V VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.0 -1.5 V ICBO Collector cut-off current VCB=-230V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-7A ; VCE=-5V 35 Transition frequency IC=-1A ; VCE=-5V 30 MHz Collector output capacitance IE=0,f=1MHz;VCB=-10V 360 pF fT COB CONDITIONS hFE-1 classifications R O 55-110 80-160 2 MIN TYP. MAX -230 UNIT V 160 Inchange Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3