Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 1 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO CONDITIONS MIN TYP. MAX IC=50mA ,IB=0 Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=140V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=5A ; VCE=5V 25 fT Transition frequency IC=1A ; VCE=10V 20 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 200 pF hFE-1 Classifications R O 55-110 80-160 2 140 UNIT Base-emitter breakdown voltage VCEsat PARAMETER V 160 Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3