ISC 2SA1095

Inchange Semiconductor
Product Specification
2SA1095
Silicon PNP Power Transistors
·
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2565
·High breakdown voltage
·High transition frequency
APPLICATIONS
·Power amplifier applications
·Recommended for 100W high-fidelity audio
frequency amplifer output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-15
A
IE
Emitter current
15
A
PC
Collectorl power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1095
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-100mA; IB=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-5 A;IB=-0.5 A
-2.0
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-2.0
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
hFE-2
DC current gain
IC=-5A ; VCE=-5V
40
fT
Transition frequency
IC=-1A ; VCE=-10V
60
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
350
pF
VCEsat
‹
CONDITIONS
B
O
Y
55-110
80-160
120-240
TYP.
B
hFE classifications
R
MIN
2
MAX
UNIT
240
Inchange Semiconductor
Product Specification
2SA1095
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3