Inchange Semiconductor Product Specification 2SD998 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・Complement to type 2SB778 APPLICATIONS ・High power amplifier applications ・Recommended for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 1.0 A PC Collector dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD998 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=5V 12 MHz Collector output capacitance f=1MHz;VCB=10V 170 pF fT COB CONDITIONS hFE Classifications R O 55-110 80-160 2 MIN TYP. MAX 120 UNIT V 55 160 Inchange Semiconductor Product Specification 2SD998 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SD998 Silicon NPN Power Transistors 4