ISC 2SA670

Inchange Semiconductor
Product Specification
2SA670
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Inverters;converters
·Power amplification
·Switching regulator ,driver
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
-3
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA670
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ,IB=0
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-50
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-4V
35
Transition frequency
IC=-0.5A ; VCE=-10V
15
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
200
MHz
Inchange Semiconductor
Product Specification
2SA670
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3