Inchange Semiconductor Product Specification 2SA670 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Inverters;converters ·Power amplification ·Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V -3 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA670 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V ICBO Collector cut-off current VCB=-50V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-4V 35 Transition frequency IC=-0.5A ; VCE=-10V 15 VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 200 MHz Inchange Semiconductor Product Specification 2SA670 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3