Inchange Semiconductor Product Specification 2SC789 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 70 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 1 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC789 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25m A;IB=0 70 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=70V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V 40 Transition frequency IC=0.5A ; VCE=10V 3 fT CONDITIONS hFE classifications O R Y 40-80 70-140 120-240 2 MIN TYP. MAX UNIT 240 MHz Inchange Semiconductor Product Specification 2SC789 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3