isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD302 DESCRIPTION ·DC Current Gain : hFE = 30(Min.)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -45V(Min.) ·Complement to Type BD301 APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-Continuous -2 A PC Collector Power Dissipation @ TC=25℃ 55 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.3 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD302 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -1.0 mA ICBO Collector Cutoff Current VCB= -40V; IE= 0; TC= 150℃ -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE DC Current Gain IC= -3A; VCE= -2V 30 Current-Gain—Bandwidth Product IC= -0.3A; VCE= -3V 3 fT isc Website：www.iscsemi.cn CONDITIONS MIN -45 B B B 2 MAX UNIT V MHz