Inchange Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1487 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICP Collector current-peak -12 A PC Collector power dissipation TC=25℃ 80 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS MAX UNIT IC=-5A ;IB=-0.5A -2.0 V Base-emitter on voltage IC=-5A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-140V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 hFE -3 DC current gain IC=-5A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 330 pF fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz hFE-2 classifications R Q P 40-80 60-120 100-200 2 MIN TYP. 200 Inchange Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3